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NPN SILICON GERMANIUM RF TRANSISTOR

NESG3032M14

NPN SiGe RF TRANSISTOR FOR

LOW NOISE, HIGH-GAIN AMPLIFICATION

4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE)

FEATURES

鈥?The device is an ideal choice for low noise, high-gain amplification

NF = 0.6 dB TYP. @ V

CE

= 2 V, I

C

= 6 mA, f = 2.0 GHz

鈥?Maximum stable power gain: MSG = 20.5 dB TYP. @ V

CE

= 2 V, I

C

= 15 mA, f = 2.0 GHz

鈥?SiGe HBT technology (UHS3) adopted: f

max

= 110 GHz

鈥?4-pin lead-less minimold (M14, 1208 package)

ORDERING INFORMATION

Part Number

NESG3032M14

Order Number

NESG3032M14-A

Package

4-pin lead-less minimold

(M14, 1208 package)

NESG3032M14-T3 NESG3032M14-T3-A

(Pb-Free)

Quantity

50 pcs

(Non reel)

10 kpcs/reel

Supplying Form

鈥?8 mm wide embossed taping

鈥?Pin 1 (Collector), Pin 4 (Emitter) face the

perforation side of the tape

Remark

To order evaluation samples, contact your nearby sales office.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T

A

= +25擄C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

tot

Note

Ratings

12.0

4.3

1.5

35

150

150

鈭?5

to +150

Unit

V

V

V

mA

mW

擄C

擄C

T

j

T

stg

Note

Mounted on 1.08 cm

2

脳

1.0 mm (t) glass epoxy PWB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

Document No. PU10575EJ01V0DS (1st edition)

Date Published July 2005 CP(K)

漏

NEC Compound Semiconductor Devices, Ltd. 2005

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