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NESG3031M14-T3 Datasheet

  • NESG3031M14-T3

  • NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

  • 101.47KB

  • 3頁

  • NEC   NEC

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PRELIMINARY DATA SHEET
NEC's NPN SiGe
NESG3031M14
HIGH FREQUENCY TRANSISTOR
FEATURES
鈥?/div>
LOW NOISE FIGURE AND HIGH-GAIN
NF = 0.95 dB TYP, G
a
= 10 dB TYP @ V
CE
= 2 V, I
C
= 6 mA, f = 5.2 GHz
NF = 1.1 dB TYP, G
a
= 9.5 dB TYP @ V
CE
= 2 V, I
C
= 6 mA, f = 5.8 GHz
鈥?/div>
鈥?/div>
鈥?/div>
MAXIMUM STABLE POWER GAIN:
MSG = 15.0 dB TYP @ V
CE
= 3 V, I
C
= 20 mA, f = 5.8 GHz
SiGe HBT TECHNOLOGY:
USH3 process, f
max
= 110 GHz
M14 PACKAGE:
4-pin lead-less minimold package
ORDERING INFORMATION
PART NUMBER
NESG3031M14
NESG3031M14-T3
QUANTITY
50 pcs (Non reel)
10 kpcs/reel
SUPPLYING FORM
鈥?8 mm wide embossed taping
鈥?Pin 1 (Collector), Pin 4 (Emitter) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales of鏗乧e.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS
(T
A
=+25潞C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
T
j
T
stg
RATINGS
12.0
4.3
1.5
35
150
150
鈭?5
to +150
UNIT
V
V
V
mA
mW
擄C
擄C
Note
Mounted on 1.08 cm
2
脳
1.0 mm, (t) glass epoxy PCB
California Eastern Laboratories

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