NESG2046M33-T3-A Datasheet

IC型號：
NESG2046M33-T3-A
PDF描述：
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICA...
文件大?。?/label>
120.24KB
PDF頁數(shù)：
3頁
芯片廠家：
NEC

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PRELIMINARY DATA SHEET

NEC's NPN SiGe TRANSISTOR NESG2046M33

FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

FEATURES

鈥?/div>

IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS:

NF = 0.8 dB TYP., G

= 11.5 dB TYP. @ V

= 1 V, I

= 3 mA, f = 2 GHz

HIGH BREAKDOWN VOLTAGE TECHNOLOGY

FOR SIGE TRANSISTORS

CEO

(absolute maximum ratings) = 5.0 V

鈥?/div>

3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE

ORDERING INFORMATION

PART NUMBER

NESG2046M33-A

NESG2046M33-T3-A

QUANTITY

50 pcs (Non reel)

10 kpcs/reel

SUPPLYING FORM

鈥?8 mm wide embossed taping

鈥?Pin 2 (Base) face the perforation side of the tape

Remark

To order evaluation samples, contact your nearby sales of鏗乧e.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS

=+25潞C)

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

SYMBOL

CBO

CEO

EBO

tot

Note

RATINGS

1.5

130

150

鈭?5

to +150

UNIT

擄C

stg

Note

Mounted on 1.08 cm

脳

1.0 mm (t) glass epoxy PCB

Caution

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

California Eastern Laboratories

標準包裝
10,000
類別
分離式半導體產(chǎn)品
家庭
RF 晶體管 (BJT)
系列
-
晶體管類型
NPN
電壓 - 集電極發(fā)射極擊穿（最大）
5V
頻率 - 轉(zhuǎn)換
18GHz
噪聲系數(shù)（dB典型值@頻率）
0.8dB ~ 1.5dB @ 2GHz
增益
9.5dB ~ 11.5dB
功率 - 最大
130mW
在某 Ic、Vce 時的最小直流電流增益 (hFE)
140 @ 2mA，1V
電流 - 集電極 (Ic)（最大）
40mA
安裝類型
表面貼裝
封裝/外殼
TO-236-3，SC-59，SOT-23-3
供應商設備封裝
3-SuperMiniMold
包裝
帶卷 (TR)

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NESG2046M33-T3-A Datasheet

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