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NESG2021M16-T3-A Datasheet

  • NESG2021M16-T3-A

  • NECs NPN SiGe HIGH FREQUENCY TRANSISTOR

  • 3頁(yè)

  • CALMIRCO

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PRELIMINARY DATA SHEET
NEC's NPN SiGe
NESG2021M16
HIGH FREQUENCY TRANSISTOR
FEATURES
鈥?/div>
鈥?/div>
HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
V
CEO
= 5 V (Absolute Maximum)
LOW NOISE FIGURE:
NF = 0.9 dB at 2 GHz
NF = 1.3 dB at 5.2 GHz
HIGH MAXIMUM STABLE GAIN:
MSG = 22.5 dB at 2 GHz
LOW PROFILE M16 PACKAGE:
6-pin lead-less minimold
M16
鈥?/div>
鈥?/div>
DESCRIPTION
NEC's NESG2021M16 is fabricated using NEC始s high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise ampli鏗乪rs,
medium power ampli鏗乪rs, and oscillators.
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
G
a
NF
G
a
RF
MSG
|S
21E
|
P
1dB
OIP
3
f
T
C
re
I
CBO
I
EBO
h
FE
Notes:
1. MSG = S
21
S
12
2. Collector to base capacitance when the emitter grounded.
3. Pulsed measurement, pulse width
鈮?/div>
350
渭s,
duty cycle
鈮?/div>
2 %.
DC
2
NESG2021M16
M16
UNITS
dB
dB
dB
dB
dB
dB
dBm
15.0
20.0
17.0
MIN
TYP
1.3
10.0
0.9
18.0
22.5
19.0
9
17
20
25
0.1
0.2
100
100
130
190
260
1.2
MAX
PARAMETERS AND CONDITIONS
Noise Figure at V
CE
= 2 V, I
C
= 3 mA, f = 5.2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Associated Gain at V
CE
= 2 V, I
C
= 3 mA, f = 5.2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Noise Figure at V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Associated Gain at V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
Maximum Stable Gain
1
at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Output Power at 1dB Compression Point at
V
CE
= 3 V, I
CQ
= 12 mA, f = 2 GHz
Gain Bandwidth Product at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Reverse Transfer Capacitance
2
at V
CB
= 2 V, I
E
= 0 mA, f = 1 GHz
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain at V
CE
= 2 V, I
C
= 5 mA
3
Output 3rd Order Intercept Point at V
CE
= 3 V, I
CQ
= 12 mA, f = 2 GHz dBm
GHz
pF
nA
nA
California Eastern Laboratories

NESG2021M16-T3-A 產(chǎn)品屬性

  • 10,000

  • 分離式半導(dǎo)體產(chǎn)品

  • RF 晶體管 (BJT)

  • -

  • NPN

  • 5V

  • 25GHz

  • 0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz

  • 10dB ~ 18dB

  • 175mW

  • 130 @ 5mA，2V

  • 35mA

  • 表面貼裝

  • 6-SMD，扁平引線

  • M16，1208

  • 帶卷 (TR)

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