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PNP SILICON HIGH

FREQUENCY TRANSISTOR

FEATURES

鈥?HIGH GAIN BANDWIDTH PRODUCT:

f

T

= 8.5 GHz TYP

鈥?HIGH SPEED SWITCHING CHARACTERISTICS

鈥?NPN COMPLIMENT AVAILABLE:

NE68133

鈥?HIGH INSERTION POWER GAIN:

|S

21E

|

2

= 12 dB at 1 GHz

NE97733

33 (SOT 23 STYLE)

DESCRIPTION

The NE97733 PNP silicon transistor is designed for

ultrahigh speed current mode switching applications and

microwave amplifiers up to 3.5 GHz. The NE97733 offers

excellent performance and reliability at low cost.

ELECTRICAL CHARACTERISTICS

(T

A

= 25擄C)

EIAJ

1

REGISTERED

SYMBOLS

f

T

NF

|S

21E

|

2

h

FE

I

CBO

I

EBO

C

RE2

P

T

PART NUMBER

NUMBER

PACKAGE OUTLINE

UNITS

GHz

dB

dB

8.0

20

碌A(chǔ)

碌A(chǔ)

pF

mW

0.5

MIN

6.0

NE97733

2SA1977

33

TYP

8.5

1.5

12.0

40

100

-0.1

-0.1

0.1

200

3.0

MAX

PARAMETERS AND CONDITIONS

Gain Bandwidth Product at V

CE

= -8 V, I

C

= -20 mA

Noise Figure at V

CE

= -8 V, I

C

= -3 mA

Insertion Power Gain at V

CE

= -8 V, I

C

= -20 mA, f = 1 GHz

Forward Current Gain Ratio at V

CE

= -8 V, I

C

= -20 mA

Collector Cutoff Current at V

CB

= -10 V, I

E

= 0

Emitter Cutoff Current at V

BE

= -1 V, I

C

= 0

Feedback Capacitance at V

CB

= -10 V, I

E

= 0 mA, f = 1 MHz

Total Power Dissipation

Notes:

1. Electronic Industrial Association of Japan.

2. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.

California Eastern Laboratories

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