TYPICAL LINEAR GAIN vs. FREQUENCY
鈥?/div>
DESCRIPTION
The NE9000, NE9001, and NE9002 are 0.5 micron recessed
gate medium power GaAs FETs for commercial and space
amplifier and oscillator applications to 20 GHz. Chip configu-
rations available are: the NE900000, a one cell die of 400
碌m
gate width; the NE900100, a one cell die of 750
碌m
gate
width; and the NE900200, a two cell die of 1500
碌m
total gate
width. The series is available in chip form or a variety of
hermetic ceramic packages. The NE900000, NE900100,
and NE900200 are standard die without wrap-around source-
metallization, while the NE900000G, NE900100G, and
NE900200G have wrap-around source metallization. The
series is space qualified.
12
9
6
3
2.0
10.0
Frequency (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
NE900089A
89A
UNITS MIN TYP MAX
mA
V
V
V
mS
mS
mS
擄C/W
W
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
dB
%
20.5
20
23
25
9
8
7
7
27
27
27
26
19.5
20.5
19.5
20.5
22
23
25.5
26.5
80
-1.5
120
-3.5
150
-5
NE900000
NE900000G
NE900075
00 (CHIP), 75
MIN TYP MAX
80
-1.5
120
-3.5
150
-5
-2
-3.5
-5
-2
25
25
50
100
180
0.8
180
0.8
100
1.5
50
3
-3.5
-5
NE900100
NE900100G
NE900175
00 (CHIP), 75
MIN TYP MAX
150
225
300
NE900200
NE900200G
NE900275
00 (CHIP), 75
MIN TYP MAX
300
450
600
SYMBOLS
I
DSS
V
P
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Saturated Drain Current at
V
DS
= 2.5 V, V
GS
= 0
Pinch-off Voltage at V
DS
= 2.5 V,
I
DS
= 2.5 mA
I
DS
= 5 mA
I
DS
= 10 mA
Transconductance at V
DS
= 2.5 V,
I
DS
= 50 mA
I
DS
= 90 mA
I
DS
= 180 mA
Thermal Resistance (Channel-to-Case)
Total Power Dissipation
Power Output at Test Point
P
IN
= 11 dBm, V
DS
= 8V, I
D
= 50mA,
f = 8 GHz
P
IN
= 12 dBm,V
DS
= 8V, I
D
= 50mA
f = 14.5 GHz
P
IN
= 15 dBm, V
DS
= 8V, I
D
= 90mA
f = 14.5 GHz
P
IN
= 19 dBm, V
DS
= 8 V, I
D
= 180 mA,
f = 14.5
Output Power at 1 dB Compression
Point,
V
DS
= 8 V, I
D =
50 mA, f = 8 GHz
V
DS
= 8 V, I
D
= 50 mA, f = 14.5 GHz
V
DS
= 8 V, I
D
= 90 mA, f = 14.5 GHz
V
DS
= 8 V, I
D
= 180 mA, f = 14.5 GHz
Gain at 1 dB Compression Point
V
DS
= 8 V, I
D
= 50 mA, f = 8 GHz
V
DS
= 8 V, I
D
= 50 mA, f = 14.5 GHz
V
DS
= 8 V, I
D
= 90 mA, f = 14.5 GHz
V
DS
= 8 V, I
D
= 180 mA, f = 14.5 GHz
Power Added Efficiency
V
DS
= 8 V, at P
1dB
Conditions.
g
m
R
TH (C-C)
P
T
P
TEST
P
1dB
G
1dB
畏
ADD
California Eastern Laboratories
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