鈥?/div>
NEW MINIATURE M13 PACKAGE:
鈥? Small transistor outline
鈥?1.0 X 0.5 X 0.5 mm
鈥? Low profile / 0.50 mm package height
鈥? Flat lead style for better RF performance
IDEAL FOR > 3 GHz OSCILLATORS
LOW NOISE, HIGH GAIN
LOW C
re
UHSO 25 GHz PROCESS
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M13
0.15
+0.1
帽0.05
0.7鹵0.05
0.5
+0.1
帽0.05
(Bottom View)
0.3
0.2
+0.1
帽0.05
0.35
2
1.0
+0.1
帽0.05
3
B7
0.7
0.35
0.15
+0.1
帽0.05
1
DESCRIPTION
NEC's NE894M13 transistor is designed for oscillator applica-
tions above 3 GHz. The NE894M13 features low voltage, low
current operation, low noise, and high gain. NEC's new low
profile/flat lead style "M13" package is ideal for today's portable
wireless applications.
0.1
0.1
0.2
0.2
0.125
+0.1
帽0.05
0.5鹵0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
UNITS
GHz
dB
dB
nA
nA
pF
MIN
17
11
鈥?
鈥?
50
鈥?
鈥?
NE894M13
2SC5787
M13
TYP
13
0.22
鈥?
鈥?
鈥?
1.4
20
MAX
鈥?/div>
0.30
100
100
100
2.5
鈥?/div>
SYMBOLS
|S
21E
|
2
|NF
I
CBO
I
EBO
h
FE
C
re
f
T
PARAMETERS AND CONDITIONS
Insertion Power Gain at V
CE
= 1 V, I
C
= 20 mA, f = 2 GHz
Reverse Transfer Capacitance
3
at V
CB
= 0.5 V, I
E
= 0 mA, f = 1 MHz
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
2
at V
CE
= 1 V, I
C
= 5 mA
Noise Figure at V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz, Z
S
= Z
OPT
Gain Bandwidth at V
CE
= 1 V, I
C
= 20 mA, f = 2 GHz
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width 鈮?350 渭s, duty cycle 鈮?2 %.
3. Collector to base capacitance when the emitter is grounded
California Eastern Laboratories
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