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NE85618-T1 Datasheet

  • NE85618-T1

  • BJT

  • 241.04KB

  • 24頁

  • ETC

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NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
鈥?/div>
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 7 GHz
E
NE856
SERIES
鈥?/div>
LOW NOISE FIGURE:
1.1 dB at 1 GHz
鈥?/div>
HIGH COLLECTOR CURRENT:
100 mA
鈥?/div>
HIGH RELIABILITY METALLIZATION
鈥?/div>
LOW COST
00 (CHIP)
B
35 (MICRO-X)
DESCRIPTION
The NE856 series of NPN epitaxial silicon transistors is de-
signed for low cost amplifier and oscillator applications. Low
noise figures, high gain, and high current capability equate to
wide dynamic range and excellent linearity. The NE856 series
offers excellent performance and reliability at low cost. This is
achieved by NEC's titanium/platinum/gold metallization sys-
tem and their direct nitride passivated base surface process.
The NE856 series is available in chip form and a Micro-x
package for high frequency applications. It is also available in
several low cost plastic package styles.
32 (TO-92)
34 (SOT 89 STYLE)
18 (SOT 343 STYLE)
NE85600
NOISE FIGURE AND GAIN
vs. FREQUENCY
V
CC
= 10 V, I
C
7 mA
4.0
MSG
3.5
3.0
2.5
NF
MIN
2.0
1.5
1.0
0.4 0.5
1.0
2
3
4
5
G
A
MAG
10
20
19 (3 PIN ULTRA SUPER
MINI MOLD)
Noise Figure, NF (dB)
15
Maximum Associated Gain, Maximum Stable Gain,
Associated Gain, MAG, MSG, G
A
(dB)
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
5
Frequency, f (GHz)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
California Eastern Laboratories

NE85618-T1相關(guān)型號PDF文件下載

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    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
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    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
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    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
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  • 英文版
    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
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  • 英文版
    NPN SILICON HIGH FREQUENCY TRANSISTOR
    CEL
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    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
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