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NE8500200-WB Datasheet

  • NE8500200-WB

  • 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

  • 8頁

  • NEC   NEC

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PRELIMINARY DATA SHEET
GaAs MES FET
NE85002 SERIES
2 W C-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W
partially matched devices. Each packaged device has an input lumped element matching network.
NE8500200 is the six-cells recessed gate chip used in 鈥?5鈥?package.
The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
has a PHS. (Plated Heat Sink)
NEC鈥檚 strigent quality assurance and test procedures assure the highest reliability and performance.
FEATURES
鈥?Class A operation
鈥?High power output
鈥?High reliability
110
100
100
240
PHYSICAL DIMENSIONS
NE8500200 (CHIP) (unit:
碌
m)
640
100
90
1800
100
SELECTION CHART
PACKAGE CODE-95 (unit: mm)
PERFORMANCE SPECIFIED
PART NUMBER
Pout (**)
(dBm)
G
L
(**)
(dB)
USABLE
FREQUENCY
(GHz)
2.0 to 10
2.5 鹵0.3 DIA
SOURCE
0.7 鹵0.1
GATE
4.0 MIN.
NE8500200(*)
NE8500200-WB(*)
NE8500200-RG(*)
NE8500295-4
NE8500295-6
NE8500295-8
33.8 min
8.0 min
5.9 鹵0.2
33.8 min
33.8 min
33.5 min
10.5 min
9.5 min
8.0 min
3.5 to 5.5
5.5 to 7.5
7.5 to 8.5
DRAIN
14.0 鹵0.3
18.5 MAX.
2.1 鹵0.15 0.1
4.5 MAX.
0.2 MAX.
7.2 鹵0.2
1.0
*
GB, RG indicate a type of containers for chips.
WB: black carrier, RG: ring,
**
Specified at the condition at the last page.
Document No. P10969EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
漏
1996

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