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NE8500100-WB Datasheet

  • NE8500100-WB

  • 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

  • 6頁

  • NEC   NEC

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PRELIMINARY DATA SHEET
GaAs MES FET
NE85001 SERIES
1 W C-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator
applications and so on.
NE8500100 is the two-cells recessed gate chip used in 鈥?9鈥?package.
The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
has a PHS. (Plated Heat Sink)
NEC鈥檚 strigent quality assurance and test procedures assure the highest reliability and performance.
FEATURES
鈥?Class A operation
鈥?High power output
鈥?High reliability
PHYSICAL DIMENSIONS
NE8500100 (CHIP) (unit:
碌
m)
65
170
146
SELECTION CHART
100
PERFORMANCE SPECIFIED
PART NUMBER
FORM
Pout (**)
(dBm)
G
L
(**)
(dB)
USABLE
FREQUENCY
(GHz)
NE8500100(*)
NE8500100-WB
NE8500100-RG
NE8500199
chip
28.5 min
9.0 typ
2.0 to 10
100
100
780
640
PACKAGE CODE-99 (unit: mm)
package
28.5 min
9.0 typ
2.0 to 10
4.0 MIN BOTH LEADS
SOURCE
1.0 鹵0.1
GATE
蠁
2.2 鹵0.3
2 PLACES
*
WB, RG indicate a type of containers for chips.
WB: black carrier, RG: ring,: gel-pack,
**
Specified at the condition at the last page.
4.3 鹵0.2
4.0
DRAIN
0.6 鹵0.1
5.2 鹵0.3
11.0 鹵0.3
15.0 鹵0.3
0.1
0.2 MAX.
1.7 鹵0.15
6.0 鹵0.2
5.0 MAX.
1.2
Document No. P10968EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
漏
1996

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