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DATA SHEET

DATA SHEET

GaAs MES FET

NE76118

L to S BAND LOW NOISE AMPLIFIER

N-CHANNEL GaAs MES FET

DESCRIPTION

NE76118 is a n-channel GaAs MES FET housed in MOLD package.

PACKAGE DIMENSIONS

in millimeters

FEATURES

鈥?Low noise figure

NF = 0.8 dB TYP. at f = 2 GHz

(1.25)

0.60 0.65

+0.1

0.3

+0.1

鈥?.05

0.3 0.4

鈥?.05

2

2.1鹵0.2

1.25鹵0.1

3

0.3

+0.1

鈥?.05

0.15

+0.1

鈥?.05

0.3

+0.1

鈥?.05

(1.3)

鈥?High associated gain

2.0鹵0.2

Ga = 13.5 dB TYP. at f = 2 GHz

鈥?Gate width : Wg = 400

P

m

鈥?4 pins super mini mold

鈥?Tape & reel packaging only available

V52

1

4

0 to 0.1

ORDERING INFORMATION

PART

NUMBER

NE76118-T1

0.9鹵0.1

QUANTITY

3 Kpcs/Reel.

PACKING STYLE

Embossed tape 8 mm wide. Pin 3 (Source),

Pin 4 (Drain) face to perforation side of the

tape.

Embossed tape 8 mm wide. Pin 1 (Source),

Pin 2 (Gate) face to perforation side of the

tape.

NE76118-T2

3 Kpcs/Reel.

PIN CONNECTIONS

1. Source

2. Gate

3. Source

4. Drain

* Please contact with responsible NEC person, if you require evaluation

sample. Unit sample quantity shall be 50 pcs. (Part No.: NE76118)

ABSOLUTE MAXIMUM RATINGS (T

A

= 25

q

C)

Drain to Source Voltage

Gate to Source Voltage

Gate to Drain Voltage

Drain Current

Total Power Dissipation

Channel Temperature

Storage Temperature

V

DS

V

GSO

V

GDO

I

D

P

tot

T

ch

T

stg

5.0

鈥?.0

鈥?.0

I

DSS

130

150

鈥?5 to +150

V

V

V

mA

mW

qC

qC

Document No. P11129EJ2V0DS00 (2nd edition)

Date Published January 1997 N

Printed in Japan

漏

1996

next

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