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NE76118_00 Datasheet

  • NE76118_00

  • GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER

  • 4頁

  • NEC   NEC

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GaAs MESFET
L TO S BAND LOW NOISE AMPLIFIER
FEATURES
鈥?LOW COST MINIATURE PLASTIC PACKAGE
(SOT-343)
鈥?LOW NOISE FIGURE:
0.8 dB typical at 2 GHz
鈥?HIGH ASSOCIATED GAIN:
13.5 dB typical at 2 GHz
鈥?L
G
= 1.0
碌m,
W
G
= 400
碌m
鈥?TAPE & REEL PACKAGING
4
NE76118
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
V
DS
= 3 V, I
D
= 10 mA
20
G
A
Noise Figure, NF (dB)
3
15
10
2
5
0
DESCRIPTION
The NE76118 is a low cost gallium arsenide metal semicon-
ductor field effect transistor housed in a miniature (SOT-343)
plastic surface mount package. The device is fabricated using
ion implantation for improved RF and DC performance, reli-
ability, and uniformity. Its low noise figure, high gain, small
size and weight make it an ideal low noise amplifier transistor
in the 1-4 GHz frequency range. The NE76118 is suitable for
GPS, PCS, WLAN, MMDS, TVRO, and other commercial
applications.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
1
NF
0
0.5
1
2
3
4
5 6 7 8 910
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOL
NF
PARAMETERS AND CONDITIONS
Noise Figure at V
DS
= 3 V, I
D
= 10 mA
f = 2 GHz
f = 4 GHz
Associated Gain at V
DS
= 3 V, I
D
= 10 mA
f = 2 GHz
f = 4 GHz
Output Power at 1 dB Gain Compression Point, f = 2 GHz
V
DS
= 3 V, I
DS
= 10 mA
V
DS
= 3 V, I
DS
= 30 mA
Gain at P
1dB
, f = 2 GHz
V
DS
= 3 V, I
DS
= 10 mA
V
DS
= 3 V, I
DS
= 30 mA
Saturated Drain Current at V
DS
= 3 V, V
GS
= 0 V
Pinch Off Voltage at V
DS
= 3 V, I
D
= 100
碌A
Transconductance at V
DS
= 3 V, I
D
= 10 mA
Gate to Source Leakage Current at V
GS
= -5 V
UNITS
dB
dB
dB
dB
dBm
dBm
dB
dB
mA
V
mS
碌A
30
-3.0
20
45
10
MIN
NE76118
18
TYP
0.8
0.9
13.5
10.5
12
14
13
14
100
-0.5
MAX
1.4
G
A
9.5
P
1dB
G
1dB
I
DSS
V
P
g
m
I
GSO
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.
California Eastern Laboratories
Associated Gain, G
A
(dB)
25

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