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NE76100N Datasheet

  • NE76100N

  • GENERAL PURPOSE GaAs MESFET

  • 8頁

  • NEC   NEC

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GENERAL PURPOSE
GaAs MESFET
FEATURES
Optimum Noise Figure, NF
OPT
(dB)
NE76100
鈥?LOW NOISE FIGURE:
NF = 0.8 dB typical at f = 4 GHz
鈥?HIGH ASSOCIATED GAIN:
G
A
= 12.0 dB typical at f = 4 GHz
鈥?L
G
= 1.0
碌m,
W
G
= 400
碌m
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
V
DS
= 3 V, I
DS
= 10 mA
4
3.5
3
2.5
2
1.5
1
NF
0.5
0
1
10
20
3
0
24
21
18
15
12
9
6
Ga
DESCRIPTION
NE76100 is a high performance gallium arsenide metal semi-
conductor field effect transistor chip. Its low noise figure makes
this device appropriate for use in the second or third stages of
low noise amplifiers operating in the 1-12 GHz frequency
range. The device is fabricated using ion implantation for
improved RF and DC performance, reliability, and uniformity.
The NE76100 is suitable for a wide variety of commercial and
industrial applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
OPT
1
G
A
1
P
1dB
PARAMETERS AND CONDITIONS
Noise Figure at V
DS
= 3 V, I
D
= 10 mA, f = 4 GHz
Associated Gain at V
DS
= 3 V, I
D
= 10 mA, f = 4 GHz
Output Power at 1 dB Gain Compression Point, f = 4 GHz
V
DS
= 3 V, I
DS
= 10 mA
V
DS
= 3 V, I
DS
= 30 mA
Gain at P
1dB
, f = 4 GHz
V
DS
= 3 V, I
DS
= 10 mA
V
DS
= 3 V, I
DS
= 30 mA
Saturated Drain Current at V
DS
= 3 V, V
GS
= 0
Pinch Off Voltage at V
DS
= 3 V, I
D
= 100
mA
Transconductance at V
DS
= 3 V, I
D
= 10 mA
Gate to Source Leak Current at V
GS
= -5 V
Thermal Resistance
UNITS
dB
dB
dBm
dBm
dB
dB
mA
V
mS
碌A(chǔ)
擄C/W
30
-3.0
20
MIN
NE76100
00 (CHIP)
TYP
0.8
12.0
12.5
15.0
11.5
13.5
60
-1.1
45
1.0
10
190
100
-0.5
MAX
1.4
G
1dB
I
DSS
V
P
g
m
I
GSO
R
TH2
Notes:
1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects
for 10 samples.
2. Chip mounted on an infinite heat sink.
California Eastern Laboratories
Associated Gain, G
A
(dB)

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