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DATA SHEET

GaAs MES FET

NE76084

C to Ku BAND LOW NOISE AMPLIFIER

N-CHANNEL GaAs MES FET

FEATURES

鈥?Low noise figure & High associated gain

NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz

鈥?Gate length: L

g

= 0.3

碌

m

鈥?Gate width : W

g

= 280

碌

m

L

1.78 鹵 0.2

1

L

0.5 TYP.

PACKAGE DIMENSIONS

(Unit: mm)

ORDERING INFORMATION

PART NUMBER

NE76084-SL

NE76084-T1

SUPPLYING

FORM

STICK

Tape & reel

1000 pcs./reel

Tape & reel

5000 pcs./reel

1.78 鹵 0.2

LEAD LENGTH

L = 1.7 mm MIN.

L = 1.0

鹵

0.2 mm

L = 1.0

鹵

0.2 mm

MARKING

E

E

2

L

3

4

L

NE76084-T1A

0.5 TYP.

ABSOLUTE MAXIMUM RATINGS (T

A

= 25

擄

C)

Drain to Source Voltage

Gate to Source Voltage

Gate to Drain Voltage

Drain Current

Total Power Dissipation

Channel Temperature

Storage Temperature

V

DS

V

GS

V

GD

I

D

P

tot

T

ch

T

stg

5.0

鈥?.0

鈥?.0

I

DSS

240

175

鈥?5 to +175

V

V

mA

mW

擄C

擄C

1. Source

2. Drain

3. Source

4. Gate

ELECTRICAL CHARACTERISTICS (T

A

= 25

擄

C)

PART NUMBER

PACKAGE CODE

CHARACTERISTIC

Gate to Source Leak Current

Saturated Drain Current

Gate to Source Cutoff Voltage

Transconductance

Noise Figure

Associated Gain

SYMBOL

I

GSO

I

DSS

V

GS(off)

g

m

NF

Ga

8.0

15

鈥?.5

30

30

鈥?.8

40

1.6

9.0

MIN.

NE76084

84

TYP.

MAX.

10

50

鈥?.0

70

1.8

8.0

15

鈥?.5

30

30

鈥?.8

40

1.8

9.0

MIN.

NE76084-2.4

84

TYP.

MAX.

10

50

鈥?.0

70

2.4

UNIT

TEST CONDITIONS

碌

A

mA

V

mS

dB

dB

V

GS

= 鈥? V

V

DS

= 3 V, V

GS

= 0 V

V

DS

= 3 V, I

DS

= 100

碌

A

V

DS

= 3 V, I

DS

= 10 mA

V

DS

= 3 V, I

DS

= 10 mA

f = 12 GHz

Document No. P11843EJ2V0DS00 (2nd edition)

(Previous No. TC-2259)

Date Published August 1996 P

Printed in Japan

漏

0.1

V

1.7 MAX.

1989

next

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