LOW NOISE
L TO Ku-BAND GaAs MESFET
FEATURES
鈥?LOW NOISE FIGURE:
1.8 dB typical at 12 GHz
鈥?HIGH ASSOCIATED GAIN:
7.5 dB typical at 12 GHz
鈥?L
G
= 0.3
碌m,
W
G
= 280
碌m
鈥?LOW COST PLASTIC PACKAGING
鈥?TAPE & REEL PACKAGING OPTION AVAILABLE
Noise Figure, NF (dB)
4
3.5
Ga
3
2.5
2
1.5
1
NF
0.5
0
1
NE76038
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
V
DS
= 3 V, I
DS
= 10 mA
24
21
18
15
12
9
6
3
0
10
20
DESCRIPTION
NE76038 is a high performance gallium arsenide metal
semiconductor field effect transistor housed in a plastic
package. Its low noise figure makes this device appropriate
for use in the second or third stages of low noise amplifiers
operating in the 1 - 14 GHz frequency range. The device is
fabricated using ion implantation for improved RF and DC
performance, reliability, and uniformity. These devices fea-
ture a recessed 0.3 micron gate and triple epitaxial technol-
ogy.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
OPT
1
PARAMETERS AND CONDITIONS
Optimum Noise Figure at V
DS
= 3 V, I
DS
= 10 mA
f = 4 GHz
f = 12 GHz
Associated Gain at V
DS
= 3 V, I
DS
= 10 mA
f = 4 GHz
f = 12 GHz
Saturated Drain Current at V
DS
= 3 V, V
GS
= 0 V
Pinch-off Voltage at V
DS
= 3 V, I
DS
= 0.1 mA
Transconductance at V
DS
= 3 V, I
DS
= 10 mA
Gate to Source Leakage Current at V
GS
= -3 V
UNITS
MIN
NE76038
38
TYP
MAX
dB
dB
dB
dB
mA
V
mS
碌A(chǔ)
12.0
15
-3.0
30
0.8
1.8
13.0
7.5
30
-0.8
40
1.2
G
A
I
DSS
V
P
g
m
I
GSO
50
-0.5
70
10
Note:
1. Typical values of noise figures are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit
with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go"
screening test with the fixture tuned for the "generic" type but not for each specimen.
California Eastern Laboratories
Associated Gain, G
A
(dB)
1
2
3
4
5
6
