鈥?/div>
HIGH RELIABILITY METALLIZATION
30 (SOT 323 STYLE)
NE734
SERIES
35 (MICRO-X)
DESCRIPTION
The NE734 series of NPN silicon general purpose UHF tran-
sistors provide the designer with a wide selection of reliable
transistors for high speed logic and wide-band low noise
amplifier applications. The series uses NEC's highly reliable
platinum-silicide, titanium, platinum, and gold metallization
system to assure uniform performance and reliability. The
NE73433 is in the plastic Mini-Mold package designed for
high-speed automated assembly operations for large volume
hybrid ICs. For hybrid MIC applications requiring more perfor-
mance, the NE73435 is recommended. This device is pack-
aged in the economical metal-ceramic, hermetic Micro-X pack-
age.
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
f
T
PARAMETERS AND CONDITIONS
Gain Bandwidth Product at
V
CE
= 10 V, I
C
= 10 mA
V
CE
= 10 V, I
C
= 5 mA
Minimum Noise
V
CE
= 10 V, I
C
= 3 mA, f = 0.5 GHz
V
CE
= 10 V, I
C
= 5 mA, f = 0.9 GHz
Maximum Available
V
CE
= 10 V, I
C
= 10 mA,
Gain
3
at
dB
dB
dB
dB
17
18
13
16
9
100
200
0.1
0.1
1.5
0.75
150
833
.55
1.5
250
550
f = 0.5 GHz
f = 1 GHz
Insertion Power Gain at V
CE
= 10 V, I
C
= 10 mA,
f = 0.5 GHz
f = 1 GHz
Forward Current Gain Ratio at
V
CE
= 10 V, I
C
= 10 mA
V
CE
= 10 V, I
C
= 5 mA
Collector Cutoff Current at V
CB
= 15 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 2 V, I
C
= 0
Collector to Base Capacitance
4
at
V
CB
= 10 V, I
C
= 0 mA, f = 1 MHz
Total Power Dissipation
Thermal Resistance (Junction to Case)
碌A(chǔ)
碌A(chǔ)
pF
mW
擄C/W
Figure
2
at
UNITS
GHz
GHz
dB
dB
MIN
NE73430
2SC4185
30
TYP
MAX
MIN
1.5
2.3
2.1
4.0
3.5
NE73435
2SC2148
35
TYP
3.0
MAX
NF
MIN
MAG
|S
21E
|
2
8
8
25
h
FE
40
100
180
0.1
I
CBO
I
EBO
C
CB
P
T
R
TH
Notes:
1. Electronic Industrial Association of Japan.
2. Input and output are tuned for optimum noise figures.
3. Maximum Available Gain (MAG) is calculated
MAG =
|S
21
|
|S
12
|
(
K
鹵
K
2
- 1
).
When K
鈮?/div>
1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S
21
|
, K = 1 + |
鈭?/div>
| - |S
11
| - |S
22
|
,
鈭?/div>
= S
11
S
22
- S
21
S
12
|S
12
|
2 |S
12
S
21
|
4. C
CB
measurement employs a three-terminal capacitance bridge incorporating a guard circuit. The emitter terminal shall be connected to the
guard terminal.
California Eastern Laboratories
1
2
3
4
5
