LOW NOISE
L TO K-BAND GaAs MESFET
FEATURES
鈥?LOW NOISE FIGURE
NF = 1.6 dB TYP at f = 12 GHz
鈥?HIGH ASSOCIATED GAIN
G
A
= 9.5 dB TYP at f = 12 GHz
鈥?L
G
= 0.3
碌m,
W
G
= 280
碌m
鈥?EPITAXIAL TECHNOLOGY
鈥?LOW PHASE NOISE
3
NE71300
NOISE FIGURE & ASSOCIATED GAIN
vs. FREQUENCY
V
DS
= 3 V, I
DS
= 10 mA
24
2.5
21
2
G
A
1.5
18
15
1
NF
0.5
12
DESCRIPTION
The NE71300 features a low noise figure and high associ-
ated gain through K-band by employing a recessed 0.3 micron
gate and triple epitaxial technology. The active area of the
chip is covered with Si0
2
and Si
3
N
4
for scratch protection as
well as surface stability. This device is suitable for both
amplifier and oscillator applications in the consumer and
industrial markets.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
9
0
1
2
10
20
30
6
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
OPT1
PARAMETERS AND CONDITIONS
Optimum Noise Figure, V
DS
= 3 V, I
DS
= 10 mA,
f = 4 GHz
f = 12 GHz
Associated Gain, V
DS
= 3 V, I
DS
= 10 mA,
f = 4 GHz
f = 12 GHz
Output Power at 1 dB Compression, V
DS
= 3 V, I
D
s = 30 mA,
f =12 GHz
Saturated Drain Current, V
DS
= 3 V, V
GS
= 0
Pinch-Off Voltage, V
DS
= 3 V, I
DS
= 0.1 mA
Transconductance, V
DS
= 3 V, I
DS
= 10 mA
Gate to Source Leakage Current at V
GS
= -5 V
Thermal Resistance (Channel to Case)
UNITS
dB
dB
dB
dB
dBm
mA
V
mS
碌A
擄C/W
20
-3.5
20
11.5
8.5
MIN
NE71300
00 (CHIP)
TYP
0.6
1.6
14.0
9.5
14.5
40
-1.1
50
1.0
10
190
120
-0.5
MAX
0.7
1.8
G
A1
P
1dB
I
DSS
V
P
g
m
I
GSO
R
TH (CH-C)2
Notes:
1. RF performance is determined by packaging and testing 10 samples per wafer; wafer rejection criteria for standard devices is 2 rejects for 10
samples.
2. Chip mounted on infinite heat sink.
California Eastern Laboratories
Associated Gain, G
A
(dB)
Noise Figure, NF (dB)
1
2
3
4
5
6
7
8
