音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

NE68818-T1 Datasheet

  • NE68818-T1

  • SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

  • 231.53KB

  • 19頁(yè)

  • NEC   NEC

掃碼查看芯片數(shù)據(jù)手冊(cè)

上傳產(chǎn)品規(guī)格書(shū)

PDF預(yù)覽

SURFACE MOUNT NPN SILICON
HIGH FREQUENCY TRANSISTOR
FEATURES
鈥?LOW PHASE NOISE DISTORTION
鈥?LOW NOISE:
1.5 dB at 2.0 GHz
鈥?LOW VOLTAGE OPERATION
鈥?LARGE ABSOLUTE MAXIMUM COLLECTOR
CURRENT:
I
C
MAX = 100 mA
鈥?AVAILABLE IN SIX LOW COST PLASTIC SURFACE
MOUNT PACKAGE STYLES
鈥?ALSO AVAILABLE IN CHIP FORM
18 (SOT 343 STYLE)
NE688
SERIES
19 (3 PIN ULTRA SUPER
MINI MOLD)
ers
mb ot
:
TE art nu e n
NO g p
n.
ar
SE
sig
n
et
LEA llowi tashe ew de r
P
fo
r n ice fo
da
e
T h
CHARACTERISTICS
e d f o o f f
his d
ELECTRICAL
m t
f r o mm e n s a l e s
co
all
re
e c
as
Ple ils:
eta 818
d
68
NE 883 9
E6
9R
N
883
E6
N
The NE688 series of NPN epitaxial silicon transistors are
designed for low cost amplifier and oscillator applications. Low
noise figures, high gain and high current capability equate to
wide dynamic range and excellent linearity. NE688's low
phase noise distortion and high fT make it an excellent choice
for oscillator applications up to 5 GHz. The NE688 series is
available in six different low cost plastic surface mount pack-
age styles, and in chip form.
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
(T
A
= 25擄C)
EIAJ
2
REGISTERED
PART NUMBER
1
NUMBER
PACKAGE OUTLINE
NE68818
2SC5194
18
NE68819
2SC5195
19
NE68830
2SC5193
30
NE68833
2SC5191
33
f
T
f
T
NF
MIN
NF
MIN
|S
21E
|
|S
21E
|
h
FE
2
2
DESCRIPTION
NE68839/39R
2SC5192/92R
39
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
Gain Bandwidth Product at
V
CE
= 1V, I
C
= 3 mA, f = 2.0 GHz
Gain Bandwidth Product at
V
CE
= 3V, I
C
= 20 mA, f = 2.0 GHz
Minimum Noise Figure at
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
Minimum Noise Figure at
V
CE
= 3 V, I
C
= 7 mA, f = 2.0 GHz
Insertion Power Gain at
V
CE
= 1V, I
C
= 3 mA, f = 2.0 GHz
Insertion Power Gain at
V
CE
= 3V, I
C
= 20 mA, f = 2.0 GHz
Forward Current Gain
3
at
V
CE
= 1 V, I
C
= 3 mA
Collector Cutoff Current
at V
CB
= 5 V, I
E
= 0 mA
Emitter Cutoff Current
at V
EB
= 1 V, I
C
= 0 mA
Feedback Capacitance at
V
CB
= 1 V, I
E
= 0 mA, f = 1 MHz
Total Power Dissipation
Thermal Resistance
(Junction to Ambient)
GHz
4
5
4.5
5
4
4.5
9
4
4.5
4
4.5
9
GHz
dB
10
9.5
8.5
1.7
2.5
1.7
2.5
1.7
2.5
1.7
2.5
1.7
2.5
dB
1.5
1.5
1.5
1.5
1.5
dB
3.0 4.0
3.0
4.0
8
2.5
3.5
2.5
3.5
4.0
4.5
9
dB
8.5
6.5
6.5
80
160
80
160
80
160
80
160
80
160
100
100
I
CBO
I
EBO
C
RE4
P
T
R
TH(J-A)
nA
nA
pF
mW
擄C/W
100
100
0.65 0.8
150
833
0.7
100
100
0.8
125
1000
100
100
0.75 0.85
150
833
100
100
0.75 0.85
200
625
0.65 0.8
200
625
R
TH(J-C)
Thermal Resistance(Junction to Case)
擄C/W
Notes:
1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
3. Pulsed measurement, PW
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2%.
4. The emitter terminal should be connected to the ground terminal of
the 3 terminal capacitance bridge.
California Eastern Laboratories

NE68818-T1相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC
  • 英文版
    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC [NEC]
  • 英文版
    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC
  • 英文版
    NPN SILICON HIGH FREQUENCY TRANSISTOR
    CEL
  • 英文版
    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC [NEC]
  • 英文版
    SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC
  • 英文版
    SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
    CEL
  • 英文版
    SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC [NEC]
  • 英文版
    SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC
  • 英文版
    SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
    CEL
  • 英文版
    SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC [NEC]
  • 英文版
    SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC
  • 英文版
    SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
    CEL
  • 英文版
    SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC [NEC]
  • 英文版
    SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC
  • 英文版
    SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
    CEL
  • 英文版
    SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC [NEC]
  • 英文版
    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC
  • 英文版
    NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
    NEC [NEC]
  • 英文版
    TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 35MA I(C) | SOT-343R
    ETC

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買(mǎi)家服務(wù)：
賣(mài)家服務(wù)：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時(shí)間周一至周五
9:00-17:30

關(guān)注官方微信號(hào)，
第一時(shí)間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫(kù)提出的寶貴意見(jiàn)，您的參與是維庫(kù)提升服務(wù)的動(dòng)力！意見(jiàn)一經(jīng)采納，將有感恩紅包奉上哦！