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NE67300 Datasheet

  • NE67300

  • LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY

  • 7頁(yè)

  • NEC   NEC

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LOW NOISE Ku-K BAND
GaAs MESFET
FOR HI REL APPLICATIONS ONLY
FEATURES
鈥?VERY HIGH f
MAX
: 100 GHz
Optimum Noise Figure, NF
OPT
(dB)
NE67300
NE67383
NE67383
NOISE FIGURE AND
ASSOCIATED GAIN vs. FREQUENCY
V
DS
= 3 V, I
DS
= 10 mA
5
G
A
4
16
20
3
12
鈥?L
G
= 0.3
碌m,
W
G
= 280
碌m
鈥?N+ CONTACT LAYER
(Triple Epitaxial Technology)
鈥?PROVEN RELIABILITY AND STABILITY
鈥?SPACE QUALIFIED
2
8
1
NF
OPT
4
0
0
1
2
4
8
12
20
30
DESCRIPTION
The NE673 features a low noise figure and high associated
gain through K-band by employing a recessed 0.3 micron
gate and triple epitaxial technology for industrial and space
applications.
The device is available as a chip (NE67300). The chip's gate
and channel are glassivated with a thin layer of Si
3
N
4
for
mechanical protection only. The NE673 is in a rugged
hermetically sealed metal/ceramic stripline package selected
for NF
OPT
performance at 12.0 GHz.
NEC's stringent quality assurance and test procedures as-
sure the highest reliability and performance.
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
OPT
G
A
P
1dB
I
DS
V
P
g
M
I
GS
R
TH (CH-A)
PARAMETERS AND CONDITIONS
Optimum Noise Figure at V
DS
= 3 V, I
DS
= 10 mA, f =12 GHz
Associated Gain at Optimum Noise Figure at V
DS
= 3 V,
I
DS
= 10 mA, f = 12 GHz
Output Power at 1 dB Compression Point at V
DS
= 3 V,
I
DS
= 30 mA, f = 12 GHz
Saturated Drain Current at V
DS
= 3 V, V
GS
= 0
Pinch-off Voltage at V
DS
= 3 V, I
DS
= 0.1 mA
Transconductance at V
DS
= 3 V, I
DS
= 10 mA
Gate to Source Leakage Current at V
GS
= -5 V
Thermal Resistance (Channel-to-Ambient)
UNITS
dB
dB
dBm
mA
V
mS
mA
擄C/W
20
-0.5
20
8.5
NE67300
00 (CHIP)
MIN
TYP MAX
1.4
10
14.5
40
-1.1
50
1
120
-3.5
100
10
190
2
20
-0.5
20
1.6
8.5
MIN
NE67383
2SK407
83
TYP MAX
1.4
10
14.5
40
-1.1
50
1
120
-3.5
100
10
450
1.6
Notes:
1. Electronic Industrial Association of Japan.
2. R
TH
(Channel to Case) for chips mounted on an infinite heat sink.
California Eastern Laboratories
Associated Gain, G
A
(dB)
鈥?LOW NOISE FIGURE
0.4 dB at 4 GHz
0.8 dB at 8 GHz
1.4 dB at 12 GHz
1.9 dB at 18 GHz
3.3 dB at 26 GHz

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