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NE664M04-T2 Datasheet

  • NE664M04-T2

  • MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

  • 9頁

  • NEC   NEC

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NEC's
MEDIUM POWER NPN NE664M04
SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
HIGH GAIN BANDWIDTH:
f
T
= 20 GHz
HIGH OUTPUT POWER:
P
-1dB
= 26 dBm at 1.8 GHz
HIGH LINEAR GAIN:
G
L
= 12 dB at 1.8 GHz
+0.40
-0.05
2
+0.30
2.05鹵0.1
1.25鹵0.1
2.0鹵0.1
1.25
0.65 0.65
0.65 0.65
LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
3
R57
DESCRIPTION
NEC's NE664M04 is fabricated using NEC's state-of-the-art
UHS0 25 GHz f
T
wafer process. With a transition frequency of
20 GHz, the NE664M04 is usable in applications from 100 MHz
to over 3 GHz. The NE664M04 provides P1dB of 26 dBm, even
with low voltage and low current, making this device an
excellent choice for the output or driver stage for mobile or fixed
wireless applications.
The NE664M04 is housed in NEC's low profile/flat lead style
"M04" package
1
+0.30
-0.05
(leads 1, 3 and ,4)
+0.01
0.59鹵0.05
4
PIN CONNECTIONS
1. Emitter
3. Emitter
2. Collector
4. Base
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
EIAJ
3
REGISTRATION NUMBER
SYMBOLS
I
CBO
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC
Current
1
Gain at V
CE
= 3 V, I
C
= 100 mA
dBm
dB
dBm
dB
%
GHz
pF
16
5.0
Output Power at 1 dB compression point at V
CE
= 3.6 V, I
CQ
= 4 mA,
f = 1.8 GHz, P
in
= 15 dBm, 1/2 Duty Cycle
Linear Gain at V
CE
= 3.6 V, I
CQ
= 20 mA, f = 1.8 GHz, P
in
= 0 dBm,
1/2 Duty Cycle
Maximum Available Power Gain
4
at V
CE
= 3 V, I
C
= 100 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 100 mA, f = 2 GHz
Collector Efficiency, 3.6 V, I
CQ
= 4 mA, f = 1.8 GHz, P
in
= 15 dBm,
1/2 Duty Cycle
Gain Bandwidth at V
CE
= 3 V, I
C
= 100 mA, f = 0.5 GHz
Feedback Capacitance
2
at V
CB
= 3 V, I
C
= 0, f = 1 MHz
UNITS
nA
nA
40
60
26.0
12.0
12.0
6.5
60
20
1.0
1.5
MIN
NE664M04
M04
2SC5754
TYP
MAX
1000
1000
100
DC
I
EBO
h
FE
P
1dB
G
L
MAG
|S
21E
|
2
畏
c
f
T
Cre
Notes:
1. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the
guard pin of capacitance meter.
3. Electronic Industrail Association of Japan
4.
MAG = |S
21
|
|S
12
|
RF
(
K -
K
2
- 1
).
California Eastern Laboratories
+0.11
-0.05
+0.1
1.30

NE664M04-T2 產(chǎn)品屬性

  • CEL

  • Single

  • NPN

  • 0.5 A

  • 735 mW

  • SOT-343

  • Reel

  • SMD/SMT

  • 3000

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