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NE663M04-T2-A Datasheet

  • NE663M04-T2-A

  • NPN SILICON HIGH FREQUENCY TRANSISTOR

  • 10頁(yè)

  • CEL   CEL

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NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
HIGH GAIN BANDWIDTH:
f
T
= 15 GHz
HIGH POWER GAIN:
IS
21E
I
2
= 11 dB TYP at 2 GHz
LOW NOISE FIGURE:
NF = 1.2 dB at 2 GHz
HIGH IP3:
NF = 27 dBm at 2 GHz
HIGH MAXIMUM STABLE GAIN:
15 dB @ 2 GHz
LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of just 0.59 mm.
Flat Lead Style for better RF performance.
M04
NE663M04
DESCRIPTION
NEC's NE663M04 is fabricated using NEC's UHS0 25 GHz f
T
wafer process. With a typical transition frequency of 19 GHz
the NE663M04 is usable in applications from 100 MHz to 5
GHz. The NE663M04 provides excellent low voltage/low
current performance.
NEC's low profile/flat lead style "M04" package is ideal for
today's portable wireless applications. The NE663M04 is an
ideal choice for LNA and oscillator requirements in all mobile
communication systems.
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CE
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current Gain
2
at V
CE
= 2 V, I
C
= 10 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 90 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 2 V, I
C
= 50 mA, f = 2 GHz
Maximum Stable Gain
4
at V
CE
= 2 V, I
C
= 50 mA, f = 2 GHz
Output Power at 1 dB compression point at
V
CE
= 2 V, I
C
= 70 mA
5
, f = 2 GHz
Third Order Intercept Point at V
CE
= 2 V, I
C
= 70 mA, f = 2 GHz
Noise Figure at V
CE
= 2 V, I
C
= 10 mA, f = 2 GHz, Z
IN
= Z
OPT
Feedback Capacitance
3
at V
CB
= 2 V, I
C
= 0, f = 1 MHz
GHz
dB
dB
dBm
dBm
dB
pF
UNITS
碌A(chǔ)
碌A(chǔ)
50
13
8
70
15
11
15
17
27
1.2
0.5
1.7
0.75
MIN
NE663M04
2SC5509
M04
TYP
MAX
0.6
0.6
100
DC
I
EBO
h
FE
f
T
|S
21E
|
2
MSG
P1dB
IP
3
NF
Cre
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
4. MSG = S
21
S
12
5. Collector current at P1dB compression.
RF
California Eastern Laboratories

NE663M04-T2-A 產(chǎn)品屬性

  • 3,000

  • 分離式半導(dǎo)體產(chǎn)品

  • RF 晶體管 (BJT)

  • -

  • NPN

  • 3.3V

  • 15GHz

  • 1.2dB ~ 1.7dB @ 2GHz

  • 15dB

  • 190mW

  • 50 @ 10mA，2V

  • 100mA

  • 表面貼裝

  • M04

  • SOT-343

  • 帶卷 (TR)

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