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NE662M04 Datasheet

  • NE662M04

  • NPN SILICON HIGH FREQUENCY TRANSISTOR

  • 11頁

  • CEL   CEL

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NPN SILICON RF TRANSISTOR
NE662M04
NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
HIGH GAIN BANDWIDTH:
f
T
= 25 GHz
LOW NOISE FIGURE:
NF = 1.1 dB at 2 GHz
HIGH MAXIMUM STABLE GAIN:
20 dB at f = 2 GHz
NEW LOW PROFILE M04 PACKAGE:
鈥?/div>
SOT-343 footprint, with a height of just 0.59 mm
鈥?/div>
Flat Lead Style for better RF performance
M04
DESCRIPTION
NEC's NE662M04 is fabricated using NEC's UHS0 25 GHz f
T
wafer process. With a typical transition frequency of 25 GHz the
NE662M04 is usable in applications from 100 MHz to 10 GHz. The NE662M04 provides excellent low voltage/low current
performance.
NEC's new low profile/flat lead style "M04" package is ideal for today's portable wireless applications. The NE662M04 is an ideal choice
for LNA and oscillator requirements in all mobile communication systems.
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current Gain
2
at V
CE
= 2 V, I
C
= 5 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
Maximum Available Power Gain
4
at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Maximum Stable Gain
5
at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz, Z
IN
= Z
OPT
Output Power at 1 dB compression point at
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Third Order Intercept Point at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Feedback Capacitance
3
at V
CB
= 2 V, I
C
= 0, f = 1 MHz
pF
GHz
dB
dB
dB
dB
dBm
14
UNITS
nA
nA
50
20
70
25
20
20
17
1.1
11
22
0.18
0.24
1.5
MIN
NE662M04
2SC5508
M04
TYP
MAX
200
200
100
DC
I
EBO
h
FE
f
T
MAG
MSG
|S
21E
|
2
NF
P
1dB
IP
3
Cre
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
4. MAG = S
21
(
K- (K
2
-1)
)
S
12
5. MSG = S
21
S
12
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 22, 2005
RF

NE662M04 產(chǎn)品屬性

  • NEC

  • Single

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