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DATA SHEET

NPN SILICON RF TRANSISTOR

NE661M04

NPN SILICON RF TRANSISTOR FOR LOW CURRENT,

LOW NOISE, HIGH-GAIN AMPLIFICATION

FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

FEATURES

鈥?Low noise and high gain with low collector current

鈥?NF = 1.2 dB, G

a

= 16 dB TYP. @f = 2 GHz, V

CE

= 2 V, I

C

= 2 mA

鈥?Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, V

CE

= 2 V, I

C

= 5 mA

鈥?f

T

= 25 GHz technology

鈥?Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)

ORDERING INFORMATION

Part Number

NE661M04

NE661M04-T2

Quantity

Loose product (50 pcs)

Taping product (3 kpcs/reel)

Packaging Style

鈥?8 mm wide emboss taping

鈥?1 pin (emitter), 2 pin (collector) feed hole direction

Remark

To order evaluation samples, consult your NEC sales representative (available in 50-pcs units).

ABSOLUTE MAXIMUM RATINGS

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

tot

Note

Ratings

15

3.3

1.5

12

39

150

鈥?5 to +150

Unit

V

V

V

mA

mW

擄C

擄C

T

j

T

stg

Note

T

A

= +25擄C (free air)

THERMAL RESISTANCE

Item

Junction to Case Resistance

Junction to Ambient Resistance

Symbol

R

th j-c

R

th j-a

Value

240

650

Unit

擄C/W

擄C/W

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P14909EJ1V0DS00 (1st edition)

Date Published June 2000 N CP(K)

Printed in Japan

漏

2000

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