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NE651R479A-T1 Datasheet

  • NE651R479A-T1

  • 0.4 W L-BAND POWER GaAs HJ-FET

  • 8頁

  • NEC   NEC

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DATA SHEET
N-CHANNEL GaAs HJ-FET
NE651R479A
0.4 W L-BAND POWER GaAs HJ-FET
DESCRIPTION
The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile
communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power (CW) with high linear
gain, high efficiency and excellent distortion and as a driver amplifier for our NE6510179A and NE6510379A.
Reliability and performance uniformity are assured by NEC鈥檚 stringent quality and control procedures.
FEATURES
鈥?GaAs HJ-FET structure
鈥?High output power
: P
out
= +27.0 dBm TYP. @ V
DS
= 3.5 V, I
Dset
= 50 mA, f = 900 MHz, P
in
= +13 dBm
P
out
= +27.0 dBm TYP. @ V
DS
= 3.5 V, I
Dset
= 50 mA, f = 1.9 GHz, P
in
= +15 dBm
P
out
= +29.5 dBm TYP. @ V
DS
= 5.0 V, I
Dset
= 50 mA, f = 1.9 GHz, P
in
= +15 dBm
鈥?High linear gain
: G
L
= 14.0 dB TYP. @ V
DS
= 3.5 V, I
Dset
= 50 mA, f = 900 MHz, P
in
= 0 dBm
G
L
= 12.0 dB TYP. @ V
DS
= 3.5 V, I
Dset
= 50 mA, f = 1.9 GHz, P
in
= 0 dBm
G
L
= 12.0 dB TYP. @ V
DS
= 5.0 V, I
Dset
= 50 mA, f = 1.9 GHz, P
in
= 0 dBm
鈥?High power added efficiency : 60 % TYP. @ V
DS
= 3.5 V, I
Dset
= 50 mA, f = 900 MHz, P
in
= +13 dBm
60 % TYP. @ V
DS
= 3.5 V, I
Dset
= 50 mA, f = 1.9 GHz, P
in
= +15 dBm
58 % TYP. @ V
DS
= 5.0 V, I
Dset
= 50 mA, f = 1.9 GHz, P
in
= +15 dBm
ORDERING INFORMATION
Part Number
NE651R479A-T1
Package
79A
Supplying Form
鈥?12 mm wide embossed taping
鈥?Qty 1 kpcs/reel
Remark
To order evaluation samples, consult your NEC sales representative
(Part number for sample order: NE651R479A).
Caution Please handle this device at static-free workstation, because this is an electrostatic
sensitive device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P13670EJ2V0DS00 (2nd edition)
Date Published June 2000 NS CP(K)
Printed in Japan
The mark
鈥?/div>
shows major revised points.
1998, 2000

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