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NE651R479A Datasheet

  • NE651R479A

  • MEDIUM POWER GaAs HJ-FET

  • 11頁

  • CEL   CEL

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NEC's 1 W, L&S-BAND
MEDIUM POWER GaAs HJ-FET NE651R479A
FEATURES
鈥?LOW COST PLASTIC SURFACE MOUNT PACKAGE
Available on Tape and Reel
鈥?USABLE TO 3.7 GHz:
Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
PCS
鈥?HIGH OUTPUT POWER:
30 dBm TYP with 5.0 V Vdc
27 dBm TYP with 3.5 V Vdc
鈥?HIGH LINEAR GAIN:
12 dB TYP at 1.9 GHz
鈥?LOW THERMAL RESISTANCE:
30擄C/W
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 79A
4.2 Max
1.5
鹵
0.2
Source
Source
Gate
5.7 Max
0.6
鹵
0.15
H
X
Drain
0.8
鹵
0.15
4.4 Max
Gate
1.0 Max
Drain
1.2 Max
T
8
0.4
鹵
0.15
0.8 Max
3.6
鹵
0.2
0.2
鹵
0.1
DESCRIPTION
NEC's NE651R479A is a GaAs HJ-FET designed for medium
power mobile communications, Fixed Wireless Access, ISM,
WLL, PCS, IMT-2000, and MMDS transmitter and subscriber
applications. It is capable of delivering 0.5 Watts of output
power (CW) at 3.5 V, and 1 Watt of output power (CW) at 5 V
with high linear gain, high efficiency, and excellent linearity.
Reliability and performance uniformity are assured by NEC's
stringent quality and control procedures.
0.9
鹵
0.2
5.7 Max
(Bottom View)
TYPICAL 5 V RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED)
(T
C
SYMBOLS
P
OUT
G
L
CHARACTERISTICS
Output Power
Linear Gain
1
Power Added Efficiency
Drain Current
UNITS
dBm
dB
%
mA
MIN
TYP
29.5
12.0
58
350
MAX
= 25擄C)
TEST CONDITIONS
f = 1.9 GHz, V
DS
= 5 V
P
IN
= +15 dBm, R
G
= 1 k
鈩?
I
DSQ
= 50 mA (RF OFF)
畏
ADD
I
D
Note:
1. P
IN
= 0 dBm.
ELECTRICAL CHARACTERISTICS
(T
C
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
P
OUT
G
L
CHARACTERISTICS
Output Power
Linear Gain
1
Power Added Efficiency
Drain Current
Saturated Drain Current
Pinch-Off Voltage
Gate to Drain Break Down Voltage
= 25擄C)
NE651R479A
79A
UNITS
dBm
dB
%
mA
A
V
V
擄C/W
-2.0
12
30
50
52
MIN
26.0
TYP
27.0
12.0
60
220
0.7
-0.4
V
DS
= 2.5 V, V
GS
= 0 V
V
DS
= 2.5 V, I
D
= 14 mA
I
GD
= 14 mA
MAX
TEST CONDITIONS
f = 1.9 GHz, V
DS
=3.5 V
P
IN
= +15 dBm, R
G
= 1 k
鈩?
I
DSQ
= 50 mA (RF OFF)
2
畏
ADD
I
D
I
DSS
V
P
BV
GD
R
TH
Thermal Resistance, Channel to Case
Notes:
1. P
IN
= 0 dBm.
2. DC performance is 100% tested. Wafers are sample tested for RF performance.
Wafer rejection criteria for standard devices is 1 reject for sample lot.
California Eastern Laboratories

NE651R479A 產(chǎn)品屬性

  • NEC

  • HEMT

  • 1.9 GHz

  • 12 dB

  • 8 V

  • - 4 V

  • 1 A

  • + 125 C

  • 2.5 W

  • SMD/SMT

  • 79A

  • 27 dBm

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