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NE6510179A-T1-A Datasheet

  • NE6510179A-T1-A

  • NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

  • 10頁(yè)

  • CEL   CEL

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NEC's 3W, L&S-BAND
NE6510179A
MEDIUM POWER GaAs HJ-FET
FEATURES
鈥?LOW COST PLASTIC SURFACE MOUNT PACKAGE
Available on Tape and Reel
鈥?USABLE TO 3.7 GHz:
Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
PCS
鈥?HIGH OUTPUT POWER:
35 dBm TYP with 5.0 V Vdc
32.5 dBm TYP with 3.5 V Vdc
鈥?HIGH LINEAR GAIN:
10 dB TYP at 1.9 GHz
0.9 鈥?0.2
4.2 MAX
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 79A
1.5 鈥?0.2
Source
Source
5.7 MAX
0.6 鈥?0.15
X
I
Gate
Drain
0.8 鈥?0.15
4.4 MAX
Gate
1.0 MAX
Drain
1.2
MAX
0.8 MAX
3.6 鈥?0.2
T
5.7 MAX
9
0.4 鈥?0.15
鈥?LOW THERMAL RESISTANCE:
5擄C/W
0.2 鈥?0.1
BOTTOM VIEW
DESCRIPTION
NEC's NE6510179A is a GaAs HJ-FET designed for medium
power mobile communications, Fixed Wireless Access, ISM,
WLL, PCS, IMT-2000, and MMDS transmitter and subscriber
applications. It is capable of delivering 1.8 watts of output
power(C/W) at 3.5 V and 3 Watts of ouptut power (CW) at 5 V
with high linear gain, high efficiency, and excellent linearity.
Reliability and performance uniformity are assured by NEC's
stringent quality and control procedures.
Note: Unless otherwise specified, tolerance is
鹵0.2
mm
ELECTRICAL CHARACTERISTICS
(T
C
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
P
OUT
G
L
CHARACTERISTICS
Output Power
Linear Gain
1
= 25擄C)
NE6510179A
79A
UNITS
dBm
dB
%
A
A
V
擄C/W
V
12
-2.0
5
50
MIN
31.5
TYP
32.5
10.0
58
0.72
2.4
-0.4
8
V
DS
= 2.5 V; V
GS
= 0 V
V
DS
= 2.5 V; I
D
= 14 mA
Channel to Case
I
GD
= 14 mA
MAX
TEST CONDITIONS
f = 1900 MHz, V
DS
= 3.5 V,
Pin = +25 dBm, Rg = 100
鈩?/div>
I
DSQ
= 200 mA (RF OFF)
2
Functional
Characteristics
畏
ADD
I
D
I
DSS
Power Added Efficiency
Drain Current
Saturated Drain Current
Pinch-Off Voltage
Thermal Resistance
Gate to Drain Breakdown Voltage
Electrical DC
Characteristics
V
P
R
TH
BV
GD
Notes:
1. Pin = 0 dBm
2. DC performance is tested 100% . Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1
reject for several samples.
California Eastern Laboratories

NE6510179A-T1-A 產(chǎn)品屬性

  • 1,000

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • HFET

  • 1.9GHz

  • 10dB

  • 3.5V

  • 2.8A

  • -

  • 200mA

  • 32.5dBm

  • 8V

  • 79A

  • 79A

  • 帶卷 (TR)

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