DATA SHEET
N-CHANNEL GaAs MES FET
NE6500379A
3W L, S-BAND POWER GaAs MESFET
DESCRIPTION
The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile
communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high
linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC鈥檚
stringent quality and control procedures.
FEATURES
鈥?High Output Power
鈥?High Linear Gain
: P
o (1dB)
= +35 dBm typ.
: 10 dB typ.
鈥?High Power Added Efficiency: 50% typ. @V
DS
= 6 V, I
Dset
= 500 mA, f = 1.9 GHz
ORDERING INFORMATION
Part Number
NE6500379A-T1
79A
Package
Supplying Form
12 mm tape width, 1 kpcs/reel
Remark
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE6500379A)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GSO
I
D
I
G
P
T
T
ch
T
stg
Ratings
15
鈥?
5.6
50
21
150
鈥?5 to +150
Unit
V
V
A
mA
W
擄C
擄C
Caution
Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
The information in this document is subject to change without notice.
Document No. P13495EJ2V0DS00 (2nd edition)
Date Published August 1998 N CP(K)
Printed in Japan
The mark
shows major revised points.
漏
1998