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NE58219-T1 Datasheet

  • NE58219-T1

  • NECs NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MIN...

  • 7頁

  • NEC   NEC

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NEC's NPN SILICON EPITAXIAL
TRANSISTOR 3 PINS ULTRA
SUPER MINI MOLD
FEATURES
鈥?/div>
HIGH f
T
:
5 GHz TYP at V
CE
= 5 V , I
C
= 5 mA, f = 1 GHz
鈥?/div>
LOW C
re
:
0.9 pF TYP at V
CB
= 5 V, I
E
= 0, f = 1 MHz
0.2
+0.1
鈥?
NE58219
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 19
鈥?ULTRA SUPER MINI MOLD PACKAGE:
1.6 x 0.8 mm
1.6鹵0.1
0.8鹵0.1
2
1.6鹵0.1
1.0
0.5
DESCRIPTION
NEC's NE58219 is a low supply voltage transistor designed for
UHF Mixer and oscillator applications. The 3 pin ultra super
mini mold package makes this device ideally suited for high
density surface mount assembly.
0.5
1
0.75鹵0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
I
EBO
V
CE
(sat)
h
FE
f
T
C
RE
|S
21E
|
2
Notes:
1. Electronic Industrial Association of Japan
2. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
Duty Cycle
鈮?/div>
2 %.
3. The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 15 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Collector Saturation Voltage at h
FE
= 10, I
C
= 5 mA
DC Current Gain at V
CE
= 5 V, I
C
= 5 mA
2
Gain Bandwidth at V
CE
= 5 V, I
C
= 5 mA
Feedback Capacitance at V
CB
= 5 V, I
E
= 0, f = 1 MHz
3
Insertion Power Gain at V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz
GHz
pF
dB
5.0
UNITS
碌A(chǔ)
碌A(chǔ)
V
60
3.0
5.0
0.9
1.2
MIN
NE58219
2SC5004
19
TYP
MAX
0.1
0.1
0.5
120
California Eastern Laboratories
0 to 0.1
0.15
+0.1
鈥?.05
0.6
0.3
+0.1
鈥?
3

NE58219-T1 產(chǎn)品屬性

  • NEC

  • Single

  • NPN

  • 0.06 A

  • 0.1 W

  • Reel

  • 3000

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