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NE5510279A-T1 Datasheet

  • NE5510279A-T1

  • 3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISS...

  • 5頁

  • NEC   NEC

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3.5 V OPERATION SILICON RF
POWER MOSFET FOR GSM1800 NE5510279A
TRANSMISSION AMPLIFIERS
FEATURES
鈥?HIGH OUTPUT POWER:
32 dBm TYP at V
DS
= 3.5 V, I
DQ
= 400 mA,
f = 1.8 GHz, P
IN
= 25 dBm
鈥?HIGH POWER ADDED EFFICIENCY:
45% TYP at V
DS
= 3.5 V, I
DQ
= 400 mA,
f = 1.8 GHz, P
IN
= 25 dBm
鈥?HIGH LINEAR GAIN:
10 dB TYP at V
DS
= 3.5 V, I
DQ
= 400 mA,
f = 1.8 GHz, P
IN
= 10 dBm
鈥?SURFACE MOUNT PACKAGE:
5.7
x
5.7
x
1.1 mm MAX
鈥?SINGLE SUPPLY:
2.8 to 6.0 V
0.9
鹵
0.2
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 79A
4.2 Max
1.5
鹵
0.2
Source
Source
Gate
5.7 Max
0.6
鹵
0.15
Drain
0.8
鹵
0.15
4.4 Max
Gate
1.0 Max
Drain
1.2 Max
0.8 Max
3.6
鹵
0.2
0.4
鹵
0.15
5.7 Max
0.2
鹵
0.1
Bottom View
DESCRIPTION
The NE5510279A is an N-Channel silicon power MOSFET
specially designed as the transmission power amplifier for
3.5 V GSM1800 handsets. Dies are manufactured using NEC's
NEWMOS technology (NEC's 0.6
碌m
WSi gate lateral
MOSFET) and housed in a surface mount package. This de-
vice can deliver 32 dBm output power with 45% power added
efficiency at 1.8 GHz under the 3.5 V supply voltage, or can
deliver 31 dBm output power at 2.8 V by varying the gate
voltage as a power control function.
APPLICATIONS
鈥?DIGITAL CELLULAR PHONES
鈥?OTHERS
ELECTRICAL CHARACTERISTICS
(T
A
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
GSS
I
DSS
V
TH
gm
R
DS(ON)
BV
DSS
CHARACTERISTICS
Gate to Source Leakage Current
Drain to Source Leakage Current
Gate Threshold Voltage
Transconductance
Drain to Source On Resistance
Drain to Source Breakdown Voltage
= 25擄C)
NE5510279A
79A
UNITS
nA
nA
V
S
-
V
MIN
-
-
1.0
-
-
20
TYP
-
-
1.35
1.50
0.27
24
MAX
100
100
2.0
-
-
-
TEST CONDITIONS
V
GSS
= 6.0 V
V
DSS
= 8.5 V
V
DS
= 4.8 V, I
DS
= 1 mA
V
DS
= 4.8 V, I
DS
1 = 500 mA, I
DS
2 = 700 mA
V
GS
= 6.0 V, V
DS
= 0.5 V
I
DSS
= 10 A
California Eastern Laboratories

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