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NE5500179A-T1 Datasheet

  • NE5500179A-T1

  • SILICON POWER MOS FET

  • 11頁

  • NEC   NEC

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DATA SHEET
SILICON POWER MOS FET
NE5500179A
4.8 V OPERATION SILICON RF POWER LD-MOS FET
FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier
for 4.8 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using NEC鈥檚 NEWMOS technology (NEC鈥檚
0.6
碌
m WSi gate lateral-diffusion MOS FET) and housed in a surface mount package. The device can deliver 30.0
dBm output power with 55% power added efficiency at 1.9 GHz under the 4.8 V supply voltage, or can deliver 27
dBm output power with 50% pozwer added efficiency at 3.5 V, respectively.
FEATURES
鈥?High output power
鈥?High linear gain
鈥?Surface mount package
鈥?Single supply
: P
out
= 30.0 dBm TYP. (V
DS
= 4.8 V, I
Dset
= 200 mA, f = 1.9 GHz, P
in
= 20 dBm)
: G
L
= 14.0 dB TYP. (V
DS
= 4.8 V, I
Dset
= 200 mA, f = 1.9 GHz, P
in
= 10 dBm)
: 5.7
脳
5.7
脳
1.1 mm MAX.
: V
DS
= 3.0 to 6.0 V
鈥?High power added efficiency :
畏
add
= 55% TYP. (V
DS
= 4.8 V, I
Dset
= 200 mA, f = 1.9 GHz, P
in
= 20 dBm)
APPLICATIONS
鈥?Digital cellular phones
: 4.8 V driver amplifier for GSM 1 800/ GSM 1 900 class 1 handsets, or 4.8 V final stage
amplifier
鈥?Digital cordless phones : 3.5 V final stage amplifier for DECT
鈥?Others
: General purpose amplifiers for 1.6 to 2.5 GHz TDMA applications
ORDERING INFORMATION
Part Number
NE5500179A-T1
Package
79A
Marking
R1
Supplying Form
鈥?12 mm wide embossed taping
鈥?Gate pin face the perforation side of the tape
鈥?Qty 1 kpcs/reel
Remark
To order evaluation samples, consult your NEC sales representative.
Part number for sample order: NE5500179A
Caution Please handle this device at static-free workstation, because this is an electrostatic
sensitive device.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10118EJ01V1DS (1st edition)
(Previous No. P15190EJ1V0DS00)
Date Published April 2002 CP(K)
Printed in Japan
The mark
!
shows major revised points.
錚?/div>
NEC Corporation 1999
錚?/div>
NEC Compound Semiconductor Devices 2002

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