鈥?/div>
0.60
DESCRIPTION
NEC's NE52418 is a low cost NPN GaAs HBT(InGaP)
suitable for front end LNA's in L/S band mobile communica-
tions applications. The NE52418 is housed in a 4-pin super
mini-mold package, making it ideal for high-density design.
NEC's stringent quality assurance and test procedures
ensure the highest reliability performance
0.9
鹵
0.1
0 to 0.1
+0.10
0.15 -0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Emitter
4. Collector
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
EBO
I
CBO
h
FE
NF
G
a
|S
21e
|
2
OIP
3
PARAMETERS AND CONDITIONS
Emitter to Base Leakage Current at V
EBO
= 3 V
Collector to Base Leakage Current at V
CBO
= 3 V
DC Current Gain at V
CE
= 2 V, I
C
= 3 mA
Noise Figure at V
CE
= 2 V, I
C
= 3 mA, f = 2 Ghz, Z
S
= Z
L
= 50
鈩?/div>
Associated Gain at V
CE
= 2 V, I
C
= 3 mA, f = 2 Ghz,
Z
S
= Z
L
= 50
鈩?/div>
Insertion Power Gain at V
CE
= 2 V, I
C
= 20 mA, f = 2 Ghz
Out Third - Order Distortion Intercept Point at V
CE
= 2 V,
f = 2 GHz, Z
S
= Z
L
= Z
OPT
, I
C
= 10 mA, 1 tone
dB
dBm
鈥?/div>
鈥?/div>
20
25
鈥?/div>
鈥?/div>
UNITS
碌A(chǔ)
碌A(chǔ)
鈥?/div>
dB
dB
MIN
鈥?/div>
鈥?/div>
100
鈥?/div>
14
NE52418
18
TYP
0.2
0.2
140
1.0
16
MAX
1.0
1.0
180
1.5
鈥?/div>
California Eastern Laboratories
NE52418-T1-A 產(chǎn)品屬性
3,000
分離式半導(dǎo)體產(chǎn)品
RF 晶體管 (BJT)
-
NPN
5V
-
1dB ~ 1.5dB @ 2GHz
14dB ~ 16dB
150mW
100 @ 3mA，2V
40mA
表面貼裝
S- 迷你型 4P
-
帶卷 (TR)
NE52418-T1-A相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
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