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NE52118-T1 Datasheet

  • NE52118-T1

  • L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

  • 12頁

  • NEC   NEC

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PRELIMINARY DATA SHEET
GaAs HETEROJUNCTION BIPOLAR TRANSISTOR
NE52118
L to S BAND LOW NOISE AMPLIFIER
NPN GaAs HBT
FEATURES
鈥?/div>
For Low Noise & High Gain amplifiers
NF = 1.0 dB TYP. G
a
= 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, V
CE
= 2 V, I
C
= 3 mA, Z
S
= Z
L
= 50
鈩?
OIP
3
= 15 dBm TYP. (@f = 2 GHz, V
CE
= 2 V, I
C
= 3 mA, Z
S
= Z
L
= 50
鈩?
鈥?/div>
4-pin super minimold package
鈥?/div>
Grounded Emitter Transistor
ORDERING INFORMATION (PLAN)
Part Number
NE52118-T1
Package
4-pin super minimold
Marking
V41
Supplying Form
Embossed tape 8 mm wide.
Pin 3, pin 4 face to perforation side of the tape.
Qty 3 kp/reel.
Remark
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE52118)
ABSOLUTE MAXIMUM RATINGS (T
A
= +25擄C)
Parameter
Collector to Emitter Voltage
Collector to Base Voltage
Emitter to Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Ratings
5.0
3.0
3.0
7
0.3
30
+125
鈥?5 to +125
Unit
V
V
V
mA
mA
mW
擄C
擄C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14544EJ1V0DS00 (1st edition)
Date Published November 1999 N CP(K)
Printed in Japan
漏
1999

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