鈥?/div>
HIGH COLLECTOR CURRENT:
250 mA MAX
NEW HIGH GAIN POWER MINI-MOLD PACKAGE
(SOT-89 TYPE)
HIGH OUTPUT POWER AT 1 dB COMPRESSION:
27 dBm TYP at 1 GHz
HIGH IP
3
:
37 dBm TYP at 1 GHz
NE461M02
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M02
BOTTOM VIEW
4.5鹵0.1
1.6鹵0.2
1.5鹵0.1
DESCRIPTION
The NE461M02 is an NPN silicon epitaxial bipolar transistor
designed for medium power applications requiring high dy-
namic range and low intermodulation distortion. This device
offers excellent performance and reliability at low cost through
NEC's titanium, platinum, gold metallization system and direct
nitride passivation of the surface of the chip. The NE461M02
is an excellent choice for low noise amplifiers in the VHF to UHF
band and is suitable for CATV and other telecommunication
applications.
0.8
MIN
0.42
鹵0.06
E
B
E
0.42
鹵0.06
1.5
3.0
0.45
鹵0.06
3.95鹵0.26
C
2.45鹵0.1
0.25鹵0.02
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
EIAJ
1
SYMBOLS
I
CBO
I
EBO
h
FE2
|S
21E
|
2
NF
1
NF
2
IM
2
PART NUMBER
REGISTERED NUMBER
PACKAGE OUTLINE
UNITS
碌A
碌A
40
dB
dB
dB
dB
7.0
MIN
NE461M02
2SC5337
M02
TYP
0.01
0.03
120
8.3
1.5
2.0
59.0
3.5
3.5
MAX
5.0
5.0
200
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 20 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 2 V, I
C
= 0
DC Current Gain at V
CE
= 10 V, I
C
= 50 mA
Insertion Power Gain at V
CE
= 10 V, I
C
= 50 mA, f = 1 GHz
Noise Figure 1 at V
CE
= 10 V, I
C
= 50 mA, f = 500 MHz
3
Noise Figure 2 at V
CE
= 10 V, I
C
= 50 mA, f = 1 GHz
3
2nd Order Intermodulation Distortion
V
CE
= 10 V, I
C
= 50 mA, Rs = R
L
= 75
鈩?/div>
Pin = 105 dB
碌V/75 鈩?
f
1
= 190 MHz
f
2
= 90 MHz, f = f
1
- f
2
3rd Order Intermodulation Distortion
V
CE
= 10 V, I
C
= 50 mA, Rs = R
L
= 75
鈩?/div>
Pin = 105 dB
碌V/75 鈩?
f
1
= 190 MHz
f
2
= 200 MHz, f = 2 x f
1
- f
2
IM
3
dB
82.0
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2 %.
3. Rs = R
L
= 50
鈩?
tuned.
California Eastern Laboratories
NEC
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2
3
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