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NE46134-T1 Datasheet

  • NE46134-T1

  • NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR

  • 10頁(yè)

  • NEC   NEC

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NEC's NPN MEDIUM POWER
MICROWAVE TRANSISTOR
FEATURES
鈥?HIGH DYNAMIC RANGE
鈥?LOW IM DISTORTION:
-40 dBc
Output Power, P
OUT
(dBm)
30.0
28.0
NE46100
NE46134
NE46134
TYPICAL OUTPUT POWER
vs. INPUT POWER
f = 1.0 GHz, I
C
= 100 mA
12.5 V
10 V
26.0
24.0
22.0
20.0
18.0
16.0
14.0
12.0
5
10
15
20
25
5V
鈥?HIGH OUTPUT POWER :
27.5 dBm at TYP
鈥?LOW NOISE:
1.5 dB TYP at 500 MHz
鈥?LOW COST
DESCRIPTION
NEC's NE461 series of NPN silicon epitaxial bipolar transis-
tors is designed for medium power applications requiring high
dynamic range. This device exhibits an outstanding combina-
tion of high gain and low intermodulation distortion, as well as
low noise figure. The NE461 series offers excellent perfor-
mance and reliability at low cost through NEC's titanium,
platinum, gold metallization system and direct nitride passiva-
tion of the surface of the chip. Devices are available in a low
cost surface mount package (SOT-89) as well as in chip form.
Input Power, P
IN
(dBm)
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
f
T
NF
MIN
G
L
|S
21E
|
2
h
FE
I
CBO
I
EBO
P
1dB
IM
3
R
TH (J-C)
R
TH (J-A)
PARAMETERS AND CONDITIONS
Gain Bandwidth Product at V
CE
= 10 V, I
C
= 100 mA
Minimum Noise Figure
3
at V
CE
= 10 V, I
C
= 50 mA, 500 MHz
V
CE
= 10 V, I
C
= 50 mA, 1 GHz
Linear Gain, V
CE
= 12.5 V, I
C
= 100 mA, 2.0 GHz
V
CE
= 12.5 V, I
C
= 100 mA, 1.0 GHz
Insertion Power Gain at 10 V, 50 mA, f = 1.0 GHz
DC Current Gain
2
at V
CE
= 10 V, I
C
= 50 mA
Collector Cutoff Current at V
CB
= 20 V, I
E
= 0 mA .
Emitter Cutoff Current at V
EB
= 2 V, I
C
= 0 mA
Output Power at 1 dB Compression, V
CE
= 12.5 V, I
C
= 100 mA, 2.0 GHz
V
CE
= 12.5 V, I
C
= 100 mA, 1.0 GHz
Intermodulation Distortion, 10 V, 100 mA, F1 = 1.0 GHz, F2 = 0.99 GHz,
Total P
OUT
= 20 dBm
Thermal Resistance (Junction to Case)
Thermal Resistance (Junction to Ambient)
碌A(chǔ)
碌A(chǔ)
dBm
dBm
dBc
擄C/W
擄C/W
27.0
27.5
-40.0
30
312.5
-40.0
32.5
UNITS
GHz
dB
dB
dB
dB
dB
40
MIN
NE46100
00 (CHIP)
TYP MAX MIN
5.5
1.5
2.0
9.0
8.0
10.0
200
5.0
5.0
5.5
40
7.0
200
5.0
5.0
NE46134
2SC4536
34
TYP MAX
5.5
1.5
2.0
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed: PW
鈮?/div>
350 ms, Duty Cycle
鈮?/div>
2%
3. RS = RL = 50
鈩?/div>
untuned

NE46134-T1 產(chǎn)品屬性

  • 1,000

  • 分離式半導(dǎo)體產(chǎn)品

  • RF 晶體管 (BJT)

  • -

  • NPN

  • 15V

  • 5.5GHz

  • 1.5dB ~ 2dB @ 500MHz ~ 1GHz

  • -

  • 2W

  • 40 @ 50mA，10V

  • 250mA

  • 表面貼裝

  • TO-243AA

  • SOT-89

  • 帶卷 (TR)

  • 2SC4536NE46134-T1TRNE46134-TRNE46134TR

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