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NE434S01-T1 Datasheet

  • NE434S01-T1

  • C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

  • 12頁

  • NEC   NEC

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DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE434S01
C BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE434S01 is a Herero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for TVRO
and another commercial systems.
1
2.0 鹵 0.2
2.
PACKAGE DIMENSIONS
(Unit: mm)
0
鹵
FEATURES
鈥?/div>
鈥?/div>
Super Low Noise Figure & High Associated Gain
NF = 0.35 dB TYP., G
a
= 15.5 dB TYP. at f = 4 GHz
Gate Width: W
g
= 280
P
m
0.
2
ORDERING INFORMATION
PART NUMBER
NE434S01-T1
NE434S01-T1B
SUPPLYING FORM
Tape & reel 1000 pcs./reel
Tape & reel 4000 pcs./reel
MARKING
E
4
1. Source
3
0.65 TYP.
1.9 鹵 0.2
1.6
2. Drain
3. Source
4. Gate
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DS
V
GS
I
D
P
tot
T
ch
T
stg
4.0
鈥?.0
I
DSS
300
125
鈥?5 to +125
V
V
mA
mW
qC
qC
0.125 鹵 0.05
0.4 MAX.
4.0 鹵 0.2
RECOMMENDED OPERATING CONDITION (T
A
= 25 擄C)
CHARACTERISTIC
Drain to Source Voltage
Drain Current
Input Power
SYMBOL
V
DS
I
D
P
in
MIN.
TYP.
2
15
MAX.
2.5
20
0
Unit
V
mA
dBm
Document No. P11344EJ3V0DS00 (3rd edition)
Date Published October 1996 P
Printed in Japan
漏
1.5 MAX.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
q
C)
2.0 鹵 0.2
0.5 TYP.
2
E
1996

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