NE3514S02-T1C-A Datasheet

IC型號(hào)：
NE3514S02-T1C-A
PDF描述：
K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
文件大?。?/label>
265.62KB
PDF頁(yè)數(shù)：
8頁(yè)
芯片廠家：
CEL

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HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE3514S02

K BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

FEATURES

鈥?Super low noise figure and high associated gain

NF = 0.75 dB TYP., G

= 10 dB TYP. @ f = 20 GHz

鈥?Micro-X plastic (S02) package

APPLICATIONS

鈥?20 GHz-band DBS LNB

鈥?Other K-band communication systems

ORDERING INFORMATION

Part Number

NE3514S02-T1C

NE3514S02-T1D

Order Number

NE3514S02-T1C-A

NE3514S02-T1D-A

Package

S02 (Pb-Free)

Quantity

2 kpcs/reel

10 kpcs/reel

Marking

Supplying Form

鈥?8 mm wide embossed taping

鈥?Pin 4 (Gate) faces the perforation side

of the tape

Remark

To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE3514S02

ABSOLUTE MAXIMUM RATINGS (T

= +25擄C)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Gate Current

Total Power Dissipation

Channel Temperature

Storage Temperature

Symbol

tot

Note

Ratings

鈭?

DSS

100

165

+125

鈭?5

to +125

Unit

碌

擄C

stg

Note

Mounted on 1.08 cm

脳

1.0 mm (t) glass epoxy PCB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

Document No. PG10593EJ01V0DS (1st edition)

Date Published February 2006 CP(N)

標(biāo)準(zhǔn)包裝
2,000
類別
分離式半導(dǎo)體產(chǎn)品
家庭
RF FET
系列
-
晶體管類型
HFET
頻率
20GHz
增益
10dB
電壓 - 測(cè)試
2V
額定電流
70mA
噪音數(shù)據(jù)
0.75dB
電流 - 測(cè)試
10mA
功率 - 輸出
-
電壓 - 額定
4V
封裝/外殼
4-SMD，扁平引線
供應(yīng)商設(shè)備封裝
S02
包裝
帶卷 (TR)

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NE3514S02-T1C-A Datasheet

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