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HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE3511S02

X TO Ku BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

FEATURES

鈥?Super low noise figure and high associated gain

NF = 0.30 dB TYP., G

a

= 13.5 dB TYP. @ f = 12 GHz

鈥?Micro-X plastic (S02) package

APPLICATIONS

鈥?X to Ku-band DBS LNB

鈥?Other X to Ku-band communication systems

ORDERING INFORMATION

Part Number

NE3511S02-T1C

NE3511S02-T1D

Order Number

NE3511S02-T1C-A

NE3511S02-T1D-A

Package

S02 (Pb-Free)

Quantity

2 kpcs/reel

10 kpcs/reel

Marking

B

Supplying Form

鈥?8 mm wide embossed taping

鈥?Pin 4 (Gate) faces the perforation side

of the tape

Remark

To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE3511S02-A

ABSOLUTE MAXIMUM RATINGS (T

A

= +25擄C)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Gate Current

Total Power Dissipation

Channel Temperature

Storage Temperature

Symbol

V

DS

V

GS

I

D

I

G

P

tot

Note

Ratings

4

鈭?

I

DSS

100

165

+125

鈭?5

to +125

Unit

V

V

mA

碌

A

mW

擄C

擄C

T

ch

T

stg

Note

Mounted on 1.08 cm

2

脳

1.0 mm (t) glass epoxy PCB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

Document No. PG10642EJ01V0DS (1st edition)

Date Published October 2006 NS CP(N)

2006

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