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PRELIMINARY PRODUCT INFORMATION

HETERO JUNCTION FIELD EFFECT TRANSISITOR

NE3509M04

L to S BAND LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

FEATURES

- Super Low Noise Figure & Associated Gain :

NF=0.4dB TYP. Ga=17.5dB TYP. @f=2GHz, VDS=2V,ID=10mA

- Flat-lead 4-pin tin-type super mini-mold(M04) package (Pb-Free T. )

APPLICATIONS

- Satellite Radio(SDARS, DMB, etc.) antenna LNA

- GPS antenna LNA

- LNA for Micro-wave communication system

ORDERING INFORMATION

Part Number

NE3509M04

NE3509M04-T2

Order Number

NE3509M04-A

NE3509M04-T2-A

Quantity

50pcs (Non reel)

3 Kpcs/reel

V80

Marking

Supplying Form

- 8 mm wide emboss taping

- Pin1(Source), Pin2(Drain)

face the perforation side of the tape

Remark

To order evaluation samples, please contact your local NEC sales office.

Part number for sample order: NE3509M04

ABSOLUTE MAXIMUM RATINGS ( T

A

=+ 25

擄C

)

PARAMETER

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Gate Current

Total Power Dissipation

Channel Temperature

Storage Temperature

SYMBOL

V

DS

V

GS

I

D

IG

P

tot

T

ch

T

stg

Note

RATINGS

4.0

-3.0

I

DSS

200

150

+150

- 65 to +150

UNIT

V

V

mA

碌A(chǔ)

mW

擄C

擄C

Note

Mounted on 1.08cm

2

X 1.0mm(t) glass epoxy PCB

Caution : Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm

that this is the latest version.

Document No. P*****EJ0V0PM00 (10th edition)

Date Published

October 2005

CP(K)

漏

NEC Compound Semiconductor Devices 2005

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