NE350184C-T1A Datasheet

IC型號(hào)：
NE350184C-T1A
PDF描述：
HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOI...
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265.42KB
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8頁
芯片廠家：
CEL

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HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE350184C

K-BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

FEATURES

鈥?Super low noise figure and high associated gain

NF = 0.7 dB TYP., G

= 13.5 dB TYP. @ f = 20 GHz

鈥?Micro-X ceramic (84C) package

APPLICATIONS

鈥?20 GHz-band DBS LNB

鈥?Other K-band communication systems

ORDERING INFORMATION

Part Number

NE350184C-T1

NE350184C-T1A

Order Number

NE350184C-T1-A

NE350184C-T1A-A

Package

84C (Pb-Free)

Quantity

1 kpcs/reel

5 kpcs/reel

Marking

Supplying Form

鈥?12 mm wide embossed taping

鈥?Pin 4 (Gate) faces the perforation side

of the tape

Remark

To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE350184C

ABSOLUTE MAXIMUM RATINGS (T

= +25擄C)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Gate Current

Total Power Dissipation

Channel Temperature

Storage Temperature

Symbol

tot

Note

Ratings

鈭?

DSS

165

+150

鈭?5

to +150

Unit

碌

擄C

stg

Note

Mounted on 1.08 cm

脳

1.0 mm (t) glass epoxy PCB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

Document No. PG10584EJ01V0DS (1st edition)

Date Published November 2005 CP(K)

制造商
CEL
產(chǎn)品種類
射頻GaAs晶體管
技術(shù)類型
HEMT
頻率
20 GHz
增益
13.5 dB
噪聲系數(shù)
0.7 dB
正向跨導(dǎo) gFS（最大值/最小值）
40 mS
漏源電壓 VDS
4 V
閘/源擊穿電壓
- 3 V
漏極連續(xù)電流
70 mA
最大工作溫度
+ 150 C
功率耗散
165 mW
安裝風(fēng)格
SMD/SMT
封裝 / 箱體
Micro-X Ceramic (84 C)
封裝
Reel

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NE350184C-T1A Datasheet

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