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NE334S01-T1B Datasheet

  • NE334S01-T1B

  • C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

  • 12頁

  • NEC   NEC

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DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE334S01
C BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE334S01 is a Herero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for TVRO
and another commercial systems.
2.0 鹵 0.2
PACKAGE DIMENSIONS
(Unit: mm)
FEATURES
鈥?/div>
鈥?/div>
Super Low Noise Figure & High Associated Gain
NF = 0.25 dB TYP., G
a
= 16.0 dB TYP. at f = 4 GHz
Gate Width: W
g
= 280
m
m
1
2.
0
鹵
0.
2
ORDERING INFORMATION
PART NUMBER
NE334S01-T1
NE334S01-T1B
SUPPLYING FORM
Tape & reel 1000 pcs./reel
Tape & reel 4000 pcs./reel
MARKING
C
4
3
0.65 TYP.
1.
2.
3.
4.
Source
Drain
Source
Gate
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
擄
C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DS
V
GS
I
D
P
tot
T
ch
T
stg
4.0
鈥?.0
I
DSS
300
125
鈥?5 to +125
V
V
mA
mW
擄
C
擄
C
1.9 鹵 0.2
1.6
0.125 鹵 0.05
0.4 MAX.
4.0 鹵 0.2
RECOMMENDED OPERATING CONDITION (T
A
= 25
擄
C)
CHARACTERISTIC
Drain to Source Voltage
Drain Current
Input Power
SYMBOL
V
DS
I
D
P
in
MIN.
TYP.
2
15
MAX.
2.5
20
0
Unit
V
mA
dBm
Document No. P11139EJ3V0DS00 (3rd edition)
Date Published October 1996 P
Printed in Japan
漏
1.5 MAX.
2.0 鹵 0.2
0.5 TYP.
2
C
1996

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