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DATA SHEET

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE33284A

L to X BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

DESCRIPTION

The NE33284A is a Herero Junction FET that utilizes the

hetero junction to create high mobility electrons. Its excellent

low noise and high associated gain make it suitable for GPS,

TVRO and another commercial systems.

L

1.78 鹵0.2

1

PACKAGE DIMENSIONS

(Unit: mm)

FEATURES

鈥?Super Low Noise Figure & High Associated Gain

NF = 0.35 dB TYP., G

a

= 15.0 dB TYP. at f = 4 GHz

鈥?Gate Width: W

g

= 280

碌

m

1.78 鹵0.2

L

U

2

L

3

L

4

ORDERING INFORMATION

SUPPLYING

FORM

STICK

Tape & reel

PART NUMBER

NE33284A-SL

NE33284A-T1

NE33284A-T1A

LEAD LENGTH

L = 1.0

鹵0.2

mm

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 藲C)

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Total Power Dissipation

Channel Temperature

Storage Temperature

V

DS

V

GS

I

D

P

tot

T

ch

T

stg

4.0

鈥?.0

I

DSS

165

150

鈥?5 to +150

V

mA

mW

藲C

藲C

1. Source

2. Drain

3. Source

4. Gate

RECOMMENDED OPERATING CONDITION (T

A

= 25 藲C)

CHARACTERISTIC

Drain to Source Voltage

Drain Current

Input Power

SYMBOL

V

DS

I

D

P

in

MIN.

TYP.

2

10

MAX.

3

20

0

Unit

V

mA

dBm

Document No. P10874EJ2V0DS00 (2nd edition)

(Previous No. TD-2369)

Date Published October 1995 P

Printed in Japan

漏

0.1

V

1.7 MAX.

L = 1.7 mm MIN.

0.5 TYP.

0.5 TYP.

1995

next

NE33284A-T1相關(guān)型號PDF文件下載

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