GAIN vs. FREQUENCY
鈮?/div>
0.20
碌m,
W
G
= 200
碌m
鈥?LOW COST METAL CERAMIC PACKAGE
鈥?TAPE & REEL PACKAGING OPTION AVAILABLE
18
0.6
15
DESCRIPTION
The NE32984D is a pseudomorphic Hetero-Junction FET that
uses the junction between Si-doped AlGaAs and undoped
InGaAs to create very high mobility electrons. The device
features mushroom shaped TiAl gates for decreased gate
resistance and improved power handling capabilities. The
mushroom gate also results in lower noise figure and high
associated gain. This device is housed in an epoxy-sealed,
metal/ceramic package and is intended for high volume con-
sumer and industrial applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
0.4
NF
0.2
12
9
0
2
4
6
8
10
20
30
6
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
1
G
A 1
I
DSS
V
P
g
m
I
GSO
R
TH (CH-A)
R
TH (CH-C)
PARAMETERS AND CONDITIONS
Optimum Noise Figure, V
DS
= 2 V, I
DS
= 10 mA, f = 12 GHz
Associated Gain, V
DS
= 2 V, I
DS
= 10 mA, f = 12 GHz
Saturated Drain Current, V
DS
= 2 V,V
GS
= 0 V
Pinch-off Voltage, V
DS
= 2 V, I
DS
= 100
碌A(chǔ)
Transconductance, V
DS
= 2 V, I
D
= 10 mA
Gate to Source Leakage Current, V
GS
= -3 V
Thermal Resistance (Channel to Ambient)
Thermal Resistance (Channel to Case)
UNITS
dB
dB
mA
V
mS
碌A(chǔ)
擄C/W
擄C/W
11.0
20
-2.0
45
MIN
NE32984D
84D
TYP
0.40
12.5
60
-0.7
60
0.5
750
350
10.0
90
-0.2
MAX
0.50
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening tuned for the "generic" type but not each specimen.
California Eastern Laboratories
Associated Gain, G
A
(dB)
1
2
3
4
