DATA SHEET
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE32584C
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE32584C is a Hetero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for DBS,
TVRO and another commercial systems.
1.78 鹵0.2
1
L
L
PACKAGE DIMENSIONS
(Unit: mm)
鈥?Super Low Noise Figure & High Associated Gain
NF = 0.45 dB TYP., G
a
= 12.5 dB TYP. at f = 12 GHz
鈥?Gate Length : L
g
d
0.2
P
m
鈥?Gate Width .. : W
g
= 200
P
m
1.78 鹵0.2
D
2
L
3
L
4
ORDERING INFORMATION
SUPPLYING
FORM
STICK
Tape & reel
1000 pcs./reel
Tape & reel
5000 pcs./reel
PART NUMBER
NE32584C-SL
NE32584C-T1
LEAD LENGTH
L = 1.7 mm MIN.
L = 1.0
r
0.2 mm
L = 1.0
r
0.2 mm
MARKING
1.7 MAX.
0.1
D
0.5 TYP.
NE32584C-T1A
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
q
C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DS
V
GS
I
D
I
G
P
tot
T
ch
T
stg
4.0
鈥?.0
I
DSS
100
165
150
鈥?5 to +150
V
V
mA
1.
2.
3.
4.
Source
Drain
Source
Gate
P
A
mW
qC
qC
RECOMMENDED OPERATING CONDITION (T
A
= 25
q
C)
CHARACTERISTIC
Drain to Source Voltage
Drain Current
Input Power
SYMBOL
V
DS
I
D
P
in
MIN.
TYP.
2
10
MAX.
3
20
0
Unit
V
mA
dBm
Document No. P12275EJ2V0DS00 (2nd edition)
(Previous No. TC-2515)
Date Published February 1997 N
Printed in Japan
漏
0.5 TYP.
FEATURES
1994