DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE32484A
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE32484A is a Hetero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for DBS,
TVRO and another commercial systems.
PACKAGE DIMENSIONS
(Unit: mm)
1.78 鹵0.2
1
L
L
FEATURES
鈥?Super Low Noise Figure & High Associated Gain
鈥?Gate Length : L
g
鈮?/div>
0.25
碌
m
鈥?Gate Width : W
g
= 200
碌
m
1.78 鹵0.2
NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz
T
2
L
3
L
4
ORDERING INFORMATION
SUPPLYING
FORM
STICK
Tape & reel
1000 pcs./reel
NE32484A-T1A
Tape & reel
5000 pcs./reel
L = 1.0
鹵
0.2 mm
PART NUMBER
NE32484A-SL
NE32484A-T1
LEAD LENGTH
L = 1.7 mm MIN.
L = 1.0
鹵
0.2 mm
MARKING
T
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DS
V
GS
I
D
I
G
P
tot
T
ch
T
stg
4.0
鈥?.0
I
DSS
100
165
150
鈥?5 to +150
V
V
mA
1.
2.
3.
4.
Source
Drain
Source
Gate
碌
A
mW
藲C
藲C
RECOMMENDED OPERATING CONDITION (T
A
= 25 藲C)
CHARACTERISTIC
Drain to Source Voltage
Drain Current
Input Power
SYMBOL
V
DS
I
D
P
in
MIN.
TYP.
2
10
MAX.
3
20
0
Unit
V
mA
dBm
Document No. P11785EJ3V0DS00 (3rd edition)
(Previous No. TC-2316)
Date Published July 1996 P
Printed in Japan
漏
0.1
1.7 MAX.
0.5 TYP.
0.5 TYP.
1991
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