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NE3210S01-T1 Datasheet

  • NE3210S01-T1

  • X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

  • 16頁

  • NEC   NEC

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DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3210S01
X to Ku BAND SUPER LOW NOISE AMPLIFER
N-CHANNEL HJ-FET
DESCRIPTION
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and associated gain make it suitable for DBS and another commercial systems.
FEATURES
鈥?Super Low Noise Figure & High Associated Gain
NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz
鈥?Gate Length: Lg
鈮?/div>
0.20
碌
m
鈥?Gate Width : Wg = 160
碌
m
ORDERING INFORMATION (PLAN)
Part Number
NE3210S01-T1
NE3210S01-T1B
Supplying Form
Tape & reel 1 000 pcs./reel
Tape & reel 4 000 pcs./reel
Marking
K
Remark
For sample order, please contact your local NEC sales office. (Part number for sample order: NE3210S01)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
G
P
tot
T
ch
T
stg
Ratings
4.0
鈥?.0
IDSS
100
165
125
鈥?5 to +125
Unit
V
V
mA
碌
A
mW
擄C
擄C
RECOMMENDED OPERATING CONDITIONS (T
A
= +25擄C)
Characteristics
Drain to Source Voltage
Drain Current
Input Power
Symbol
V
DS
I
D
P
in
MIN.
1
5
鈥?/div>
TYP.
2
10
鈥?/div>
MAX.
3
15
0
Unit
V
mA
dBm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14067EJ2V0DS00 (2nd edition)
Date Published November 1999 N CP(K)
Printed in Japan
The mark
shows major revised points.
漏
1999

NE3210S01-T1相關(guān)型號PDF文件下載

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