GENERAL PURPOSE
DUAL-GATE GaAS MESFET
FEATURES
鈥?SUITABLE FOR USE AS RF AMPLIFIER IN
UHF TUNER
鈥?LOW C
RSS
:
0.02 pF (TYP)
鈥?HIGH GPS:
20 dB (TYP) AT 900 MHz
鈥?LOW NF:
1.1 dB TYP AT 900 MHz
鈥?L
G1
= 1.0
碌m,
L
G2
= 1.5
碌m,
W
G
= 400
碌m
鈥?ION IMPLANTATION
鈥?AVAILABLE IN TAPE & REEL OR BULK
Power Gain, G
PS
(dB)
20
NE25139
POWER GAIN AND NOISE FIGURE vs.
DRAIN TO SOURCE VOLTAGE
G
PS
10
V
G2S
= 1 V
V
G2S
= 0.5 V
V
G2S
= 2 V
10
I
D
= 10 mA
f = 900 MHz
5
NF
0
0
5
10
0
DESCRIPTION
The NE251 is a dual gate GaAs FET designed to provide
flexibility in its application as a mixer, AGC amplifier, or low
noise amplifier. As an example, by shorting the second gate
to the source, higher gain can be realized than with single gate
MESFETs. This device is available in a mini-mold (surface
mount) package.
Drain to Source Voltage, V
DS
(V)
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOL
NF
G
PS
BV
DSX
I
DSS
V
G1S (OFF)
V
G2S (OFF)
I
G1SS
I
G2SS
|Y
FS
|
C
ISS
C
RSS
PARAMETERS AND CONDITIONS
Noise Figure at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 900 MHz
Power Gain at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 900 MHz
Drain to Source Breakdown Voltage at V
G1S
= -4 V,
V
G2S
= 0, I
D
= 10
碌A(chǔ)
Saturated Drain Current at V
DS
= 5 V, V
G2S
= 0 V, V
G1S
= 0 V
Gate 1 to Source Cutoff Voltage at V
DS
= 5 V,
V
G2S
= 0 V, I
D
= 100
碌A(chǔ)
Gate 2 to Source Cutoff Voltage at V
DS
= 5 V,
V
G1S
= 0 V, I
D
= 100
碌A(chǔ)
Gate 1 Reverse Current at V
DS
= 0, V
G1S
= -4V, V
G2S
= 0
Gate 2 Reverse Current at V
DS
= 0, V
G2S
= -4V, V
G1S
= 0
Forward Transfer Admittance at V
DS
= 5 V, V
G2S
= 1 V,
I
D
= 10 mA, f = 1.0 kHz
Input Capacitance at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 1 MHz
Reverse Transfer Capacitance at V
DS
= 5 V, V
G2S
= 1 V,
I
D
= 10 mA, f = 1 MHz
UNITS
dB
dB
V
mA
V
V
碌A(chǔ)
碌A(chǔ)
mS
pF
pF
18
0.5
25
1.0
0.02
16
13
5
-3.5
-3.5
10
10
35
1.5
0.03
20
40
MIN
NE25139
39
TYP
1.1
20
MAX
2.5
California Eastern Laboratories
Noise Figure, NF (dB
)