GENERAL PURPOSE
DUAL-GATE GaAS MESFET
FEATURES
鈥?SUITABLE FOR USE AS RF AMPLIFIER IN
UHF TUNER
鈥?LOW C
RSS
:
0.02 pF (TYP)
鈥?HIGH POWER GAIN:
20 dB (TYP) AT 900 MHz
鈥?LOW NF:
1.1 dB TYP AT 900 MHz
鈥?L
G1
= 1.0
碌m,
L
G2
= 1.5
碌m,
W
G
= 400
碌m
鈥?ION IMPLANTATION
鈥?AVAILABLE IN TAPE & REEL OR BULK
鈥?LOW PACKAGE HEIGHT:
1.0 mm MAX
Power Gain, G
PS
(dB)
20
NE25118
POWER GAIN AND NOISE FIGURE
vs.
DRAIN TO SOURCE VOLTAGE
G
PS
10
V
G2S
= 1 V
V
G2S
= 0.5 V
V
G2S
= 2 V
10
I
D
= 10 mA
f = 900 MHz
5
NF
0
0
0
5
10
DESCRIPTION
The NE25118 is a dual gate GaAs FET designed to provide
flexibility in its application as a mixer, AGC amplifier, or low
noise amplifier. As an example, by shorting the second gate
to the source, higher gain can be realized than with single gate
MESFETs. This device is available in a 4 pin super mini-mold
package, (SOT-343 type). Maximum package height of 1.0
mm makes the NE25118 an ideal device for PCMCIA card
applications.
Drain to Source Voltage, V
DS
(V)
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
PACKAGE OUTLINE
SYMBOL
NF
G
PS
BV
DSX
I
DSS
V
G1S (OFF)
V
G2S (OFF)
I
G1SS
I
G2SS
|Y
FS
|
C
ISS
C
RSS
PARAMETERS AND CONDITIONS
Noise Figure at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 900 MHz
Power Gain at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 900 MHz
Drain to Source Breakdown Voltage at V
G1S
= -4 V,
V
G2S
= 0, I
D
= 10
碌A(chǔ)
Saturated Drain Current at V
DS
= 5 V, V
G2S
= 0 V, V
G1S
= 0 V
Gate 1 to Source Cutoff Voltage at V
DS
= 5 V,
V
G2S
= 0 V, I
D
= 100
碌A(chǔ)
Gate 2 to Source Cutoff Voltage at V
DS
= 5 V,
V
G1S
= 0 V, I
D
= 100
碌A(chǔ)
Gate 1 Reverse Current at V
DS
= 0, V
G1S
= -4V, V
G2S
= 0
Gate 2 Reverse Current at V
DS
= 0, V
G2S
= -4V, V
G1S
= 0
Forward Transfer Admittance at V
DS
= 5 V, V
G2S
= 1 V,
I
D
= 10 mA, f = 1.0 kHz
Input Capacitance at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 1 MHz
Reverse Transfer Capacitance at V
DS
= 5 V, V
G2S
= 1 V,
I
D
= 10 mA, f = 1 MHz
UNITS
dB
dB
V
mA
V
V
碌A(chǔ)
碌A(chǔ)
mS
pF
pF
18
0.5
25
1.0
0.02
16
13
5
-3.5
-3.5
10
10
35
1.5
0.03
20
40
MIN
NE25118
18
TYP
1.1
20
MAX
2.5
California Eastern Laboratories
Noise Figure, NF (dB
)
1
2
3
4
