鈥?/div>
LARGE DYNAMIC RANGE:
19 dBm at 1 dB,
2 GHz Gain Compression
DESCRIPTION
NEC's NE021 series of NPN silicon transistors provides eco-
nomical solutions to wide ranges of amplifier and oscillator
problems. Low noise and high current capability provide low
intermodulation distortion. The NE021 series is available as a
chip or in several package styles. The series uses the NEC
gold, platinum, titanium, and platinum-silicide metallization
system to provide the utmost in reliability. NE02107 is avail-
able in both common-base and common-emitter configura-
tions and has been qualified for high-reliability space applica-
tions.
00 (CHIP)
E:
num
OT p a r t
are
E N ing
AS
eet
PL E f o l l o w a t a s h
h e t h is d e :
T
ti v
m
mo 00
fr o
NE02135
ro
p
PARAMETERS
1
TYPICAL NOISE
non NE02 33
er s
1
mb
02
nu
NE 2139
art
are
E0 ing p
N
e et
l o w a t a sh
NE02139
fol
TYPICAL NOISE PARAMETERS
he this d
T
e d:
fr o m o nt i n u 0 7
for
i sc
021 5
d
fice
NE 21 3
of
les
0
N E a l l sa
e c
eas .
Pl
ils
eta
d
33 (SOT 23 STYLE)
35 (MICRO-X)
(T
A
= 25擄C)
Rn/50
FREQ.
(MHz)
NF
OPT
(dB)
G
A
螕
OPT
(dB)
MAG
ANG
V
CE
= 10 V, I
C
= 5 mA
500
1.2
1000
1500
2000
2500
3000
3500
500
1.5
2.0
2.4
2.6
3.6
3.7
18.60
.36
69
.14
39 (SOT 143 STYLE)
13.82
11.83
9.36
7.82
7.51
6.31
.31
.50
124
165
.12
.05
.44
.52
.68
.71
-175
-161
-141
-139
149
.06
.10
.14
.21
FREQ.
(MHz)
NF
OPT
(dB)
G
A
螕
OPT
V
CE
= 10 V, I
C
= 20 mA
1.8
1000
1500
2000
2500
3000
3500
1.9
2.4
2.9
3.2
3.9
4.3
(dB)
MAG
ANG
Rn/50
21.32
.16
.15
V
CE
= 10 V, I
C
= 20 mA
500
1.8
1000
1500
2000
2.1
16.15
13.50
11.02
9.12
8.10
6.48
.33
.46
.53
169
.13
17.5
9.5
7.5
0.11
156
.20
-179
-167
.09
.08
12.5
0.27
168
.16
2.3
2.6
0.36
0.43
-156
-147
.18
.21
.57
.62
.67
-154
-139
-134
.14
.27
.42
ers
b
07/07B
(T
A
= 25擄C)
California Eastern Laboratories