NDP6060 Datasheet

IC型號：
NDP6060
PDF描述：
N-Channel Enhancement Mode Field Effect Transistor
文件大?。?/label>
361.31KB
PDF頁數(shù)：
12頁
芯片廠家：
FAIRCHILD

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March 1996

NDP6060 / NDB6060

N-Channel Enhancement Mode Field Effect Transistor

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high

cell density, DMOS technology. This very high density

process has been especially tailored to minimize on-state

resistance, provide superior switching performance, and

withstand high energy pulses in the avalanche and

commutation modes. These devices are particularly suited

for low voltage applications such as automotive, DC/DC

converters, PWM motor controls, and other battery

powered circuits where fast switching, low in-line power

loss, and resistance to transients are needed.

Features

48A, 60V. R

DS(ON)

= 0.025

鈩?/div>

@ V

=10V.

Critical DC electrical parameters specified at elevated

temperature.

Rugged internal source-drain diode can eliminate the need

for an external Zener diode transient suppressor.

175擄C maximum junction temperature rating.

High density cell design for extremely low R

DS(ON)

TO-220 and TO-263 (D

PAK) package for both through hole

and surface mount applications.

________________________________________________________________________________

Absolute Maximum Ratings

Symbol

DSS

DGR

GSS

Parameter

Drain-Source Voltage

= 25擄C unless otherwise noted

NDP6060

鹵 20

鹵 40

NDB6060

Units

Drain-Gate Voltage (R

< 1 M

鈩?/div>

)

Gate-Source Voltage - Continuous

- Nonrepetitive (t

< 50 碌s)

Drain Current

- Continuous

=25 C

=100

144

100

0.67

-65 to 175

275

- Continuous

- Pulsed

Total Power Dissipation @ T

= 25擄C

Derate above 25擄C

W/擄C

擄C

STG

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

漏 1997 Fairchild Semiconductor Corporation

NDP6060 Rev. B1 / NDB6060 Rev. C

產(chǎn)品培訓模塊
High Voltage Switches for Power ProcessingSMPS Power Switch
標準包裝
50
類別
分離式半導體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET N 通道，金屬氧化物
FET 特點
標準型
漏極至源極電壓(Vdss)
60V
電流 - 連續(xù)漏極(Id) @ 25° C
48A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
25 毫歐 @ 24A，10V
Id 時的 Vgs(th)（最大）
4V @ 250µA
閘電荷(Qg) @ Vgs
70nC @ 10V
輸入電容 (Ciss) @ Vds
1800pF @ 25V
功率 - 最大
100W
安裝類型
通孔
封裝/外殼
TO-220-3
供應商設備封裝
TO-220AB
包裝
管件

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