NDH8304P Datasheet

IC型號：
NDH8304P
PDF描述：
Dual P-Channel Enhancement Mode Field Effect Transistor
文件大小：
74.08KB
PDF頁數(shù)：
6頁
芯片廠家：
FAIRCHILD

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May 1997

NDH8304P

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description

SuperSOT

-8 P-Channel enhancement mode power field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage

applications such as notebook computer power management

and other battery powered circuits where fast high-side

switching, and low in-line power loss are needed in a very small

outline surface mount package.

Features

-2.7 A, -20 V. R

DS(ON)

= 0.07

鈩?/div>

@ V

= -4.5 V

DS(ON)

= 0.095

鈩?/div>

@ V

= -2.7 V.

Proprietary SuperSOT

-8 package design using copper

lead frame for superior thermal and electrical capabilities.

High density cell design for extremely low R

DS(ON)

Exceptional on-resistance and maximum DC current

capability.

___________________________________________________________________________________________

Absolute Maximum Ratings

= 25擄C unless otherwise noted

Symbol

DSS

GSS

STG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

Maximum Power Dissipation

(Note 1)

NDH8304P

-20

鹵8

-2.7

-10

0.8

-55 to 150

Units

擄C

Operating and Storage Temperature Range

THERMAL CHARACTERISTICS

胃JA

胃JC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1)

156

擄C/W

漏 1997 Fairchild Semiconductor Corporation

NDH8304P Rev.C

標準包裝
3,000
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 陣列
系列
-
FET 型
2 個 P 溝道（雙）
FET 特點
邏輯電平門
漏極至源極電壓(Vdss)
20V
電流 - 連續(xù)漏極(Id) @ 25° C
2.7A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
70 毫歐 @ 2.7A，4.5V
Id 時的 Vgs(th)（最大）
1V @ 250µA
閘電荷(Qg) @ Vgs
23nC @ 4.5V
輸入電容 (Ciss) @ Vds
865pF @ 10V
功率 - 最大
800mW
安裝類型
表面貼裝
封裝/外殼
8-SSOT，SuperSOT-8
供應(yīng)商設(shè)備封裝
8-SSOT
包裝
帶卷 (TR)

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